RF2317 3 LINEAR CATV AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description -A- The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than ±0.5dB from 50MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3GHz. The device is selfcontained with 75Ω input and output impedances and requires only two external DC biasing elements to operate as specified. 0.020 REF Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.008 0.004 0.157 0.150 0.020 0.014 0.393 0.386 0.034 REF 0.068 0.064 0.068 0.053 0.244 0.229 8° MAX 0° MIN 0.034 0.016 Optimum Technology Matching® Applied Si BJT LINEAR CATV AMPLIFIERS 3 0.009 0.007 Package Style: CJ2BAT0 Features • DC to 3.0GHz Operation NC 1 16 NC • Internally Matched Input and Output GND 2 15 GND • 15dB Small Signal Gain GND 3 14 GND • 4.9dB Noise Figure 13 RF OUT • +26dBm Output Power 12 NC • Single 9V to 12V Power Supply RF IN 4 NC 5 GND 6 11 GND GND 7 10 GND NC 8 9 NC Functional Block Diagram Rev A16 010816 Ordering Information RF2317 RF2317 PCBA RF2317 PCBA Linear CATV Amplifier Fully Assembled Evaluation Board - 50Ω Fully Assembled Evaluation Board - 75Ω RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 3-13 RF2317 Absolute Maximum Ratings Parameter Device Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature LINEAR CATV AMPLIFIERS 3 Parameter Min. Rating Unit 250 +18 20:1 -40 to +85 -40 to +150 mA dBm °C °C Specification Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Overall (50Ω) Frequency Range Gain Noise Figure Input VSWR DC 13.5 Output VSWR 3000 15.0 14.5 4.9 1.7 MHz dB dB 2.2 Output IP3 +37 Output IP2 Output P1dB Saturated Output Power Reverse Isolation Condition T=25 °C, ICC =180mA, RC =11Ω, 50Ω System 3dB Bandwidth From 100MHz to 1000MHz Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. At 100MHz At 500MHz At 900MHz F1 =400MHz, F2 =500MHz, FOUT =100MHz At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz +42 +40 +38 +63 +25.5 +24 +22 +26 +25 +23 20 dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dB 47 153 8.6x102 °C/W °C years TAMB =+85°C 5 years TAMB =+25°C ICC=180mA, PDISS =1.7W, TAMB=85°C 9.4x103 °C/W °C years years Thermal ThetaJC Maximum Junction Temperature Mean Time Between Failures 1.8x10 54 177 99 ThetaJC Maximum Junction Temperature Mean Time Between Failures ICC=150mA, PDISS =1.3W, TAMB=85°C TAMB =+85°C TAMB =+25°C Power Supply Device Voltage Operating Current Range 3-14 8.3 8.7 100 180 V V mA On pin 13, ICC =150mA On pin 13, ICC =180mA Actual current determined by VCC and RS Rev A16 010816 RF2317 Specification Min. Typ. Max. Unit Overall (75Ω) Frequency Range Gain Noise Figure Input VSWR DC Output VSWR +37 Saturated Output Power Reverse Isolation MHz dB dB 1.5:1 Output IP3 Output IP2 Output P1dB 3000 15.0 5.3 1.1:1 +42 +40 +38 +63 +24 +23 +21 +25 +24 +22 20 dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dB 79 Channels XMOD CTB CSO+1.25MHz CSO-1.25MHz -110 -78 -75 -88 -88 -88 -93 -78 -70 -68 -78 -85 dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc -91 -77 -75 -86 -85 -85 -92 -78 -71 -63 -68 -81 dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc 110 Channels XMOD CTB CSO+1.25MHz CSO-1.25MHz Rev A16 010816 Condition T=25°C, ICC =180mA, RC =11Ω, 75Ω System 3dB Bandwidth From 100MHz to 1000MHz Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. At 100MHz At 500MHz At 900MHz F1 =400MHz, F2 =500MHz, FOUT =100MHz At 100MHz At 500MHz At 900MHz At 100MHz At 500MHz At 900MHz 10dBmV per channel, flat, at the input of the amplifier; ICC =150mA, VCC =10.6V At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz 10dBmV per channel, flat, at the input of the amplifier; ICC =150mA, VCC =10.6V At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz At 55.25MHz At 331.25MHz At 547.25MHz 3-15 3 LINEAR CATV AMPLIFIERS Parameter RF2317 Pin 1 2 Function NC GND 3 4 GND RF IN 5 6 7 8 9 10 11 12 13 NC GND GND NC NC GND GND NC RF OUT LINEAR CATV AMPLIFIERS 3 14 15 16 3-16 GND GND NC Description Interface Schematic This pin is internally not connected. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Each ground pin should have a via to the ground plane. Same as pin 2. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. This pin is internally not connected. Same as pin 2. Same as pin 2. This pin is internally not connected. This pin is internally not connected. Same as pin 2. Same as pin 2. This pin is internally not connected. RF output and bias pin. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. For biasing, an RF choke in series with a resistor is needed. The DC voltage on this pin is typically 8.3V with a current of 150mA. See device voltage versus device current plot. In lower power applications the value of RC can be increased to lower the current and VD on this pin. RF OUT RF IN Same as pin 2. Same as pin 2. This pin is internally not connected. Rev A16 010816 RF2317 Application Schematic 5MHz to 50MHz Reverse Path VCC 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 11Ω 39µH 18 nF 3 18 nF RF OUT LINEAR CATV AMPLIFIERS RF IN 10 nF NOTES: Gain Flatness <0.5 dB Input and Output Return Loss >20 dB 75 Ω in system Evaluation Board Schematic - 50Ω (Download Bill of Materials from www.rfmd.com.) P1 P1-1 J1 RF IN 1 VCC 2 GND 3 NC 50Ω µstrip C1 1 nF 1 16 2 15 3 14 4 13 RT = 10.2 Ω VCC 5 12 6 11 7 10 8 9 R1 51Ω R2 51Ω L1 3.3µH C2 1 nF R3 51Ω R4 51Ω 50Ω µstrip R5 51Ω C3 220 pF C4 100 nF C5 1 µF J2 RF OUT 2317400 Rev - Rev A16 010816 3-17 RF2317 Evaluation Board Schematic - 75Ω VCC C3 0.1 uF P1 P1-1 LINEAR CATV AMPLIFIERS 3 1 VCC 2 GND 3 J1 RF IN 75Ω µstrip NC C1 1 nF 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 R4 56Ω R1 56Ω R2 56Ω L1 1000 n H C2 1 nF R3 56Ω 75Ω µstrip J2 RF OUT 2317401 Rev - 3-18 Rev A16 010816 RF2317 Evaluation Board Layout - 50Ω 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4 LINEAR CATV AMPLIFIERS 3 Evaluation Board Layout - 75Ω 1.40” x 1.40” Board Thickness 0.062”, Board Material FR-4 Rev A16 010816 3-19 RF2317 Swp Max 2GHz 2. 0 2. 0 6 0. 0.8 1.0 75 Ohms, ICC = 180 mA, Temp = 25°C Swp Max 2GHz 6 0. 0.8 1.0 75 Ohms, ICC = 150 mA, Temp = 25°C 0. 4 0. 4 0 3. 0 3. 0 4. 0 4. 5.0 5.0 0.2 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0 LINEAR CATV AMPLIFIERS -10.0 -4 .0 -5. 0 -3 .0 S[1,1] Collector Voltage versus Current .0 -2 Gain versus Frequency 15.4 10.0 -40 degrees C Vcc +85 degrees C 15.0 8.0 Gain (dB) Collector Voltage (Volts) +26 degrees C 15.2 9.0 7.0 14.8 14.6 6.0 14.4 5.0 14.2 4.0 0.0 50.0 100.0 150.0 Collector Current (mA) 3-20 Swp Min 0.005GHz -1.0 -0.8 -0 .6 .0 -2 .4 -0 Swp Min 0.005GHz -1.0 -0.8 -0 .6 .4 -0 S[2,2] 2 -0. -3 .0 S[1,1] -4 .0 -5. 0 S[2,2] 2 -0. -10.0 0.4 10.0 3 200.0 250.0 14.0 100.0 200.0 300.0 400.0 500.0 Frequency (MHz) Rev A16 010816