RF2402 5 UHF QUADRATURE MODULATOR Typical Applications • Digital and Spread-Spectrum Systems • AM, SSB, DSB Modulation • GMSK, QPSK, DQPSK, QAM Modulation • Image-Reject Upconverters • GSM and D-AMPS Cellular Systems Product Description .157 .150 1 GaAs HBT Si Bi-CMOS SiGe HBT ü .010 .004 5 .344 .337 .050 .244 .228 .065 .043 8 °MAX 0°MIN .050 .016 Optimum Technology Matching® Applied Si BJT .018 .014 MODULATORS AND UPCONVERTERS The RF2402 is a monolithic integrated universal modulation system capable of generating modulated AM, PM, or compound carriers in the UHF frequency range. The IC contains all of the required components to implement the modulation function including differential amplifiers for the baseband inputs, a 90° hybrid phase splitter, limiting LO amplifiers, two balanced mixers, a combining amplifier, and an output RF amplifier which will drive a 50Ω load. Component matching, which can only be accomplished with monolithic construction, is used to full advantage to obtain excellent amplitude balance and high phase accuracy. The unit features low power consumption, single power supply operation, and adjustment free operation with no external parts required to operate the part as specified. .010 .007 Package Style: SOP-14 GaAs MESFET Si CMOS Features • Single 3V to 5V Power Supply • Low Power and Small Size VDD2 1 VDD1 2 POWER CONTROL 14 RF OUT • CMOS Compatible Power Down Control 13 GND2 • Excellent Amplitude and Phase Balance VPD 3 12 GND I SIG 4 11 GND • Low Broadband Noise Floor • 600MHz to 1000MHz Operation I REF 5 Σ 10 GND1 +45° -45° Q REF 6 9 PHASE Q SIG 7 8 LO IN Functional Block Diagram Rev B1 010329 Ordering Information RF2402 RF2402 PCBA UHF Quadrature Modulator Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5-1 RF2402 Absolute Maximum Ratings Parameter Rating Unit -0.5 to +7.5 VDC -0.5 to VDD +0.4 +6 -40 to +85 -40 to +150 VDC dBm °C °C Supply Voltage (VDD) Power Down Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =5VDC, I&Q inputs =2VPP Carrier Input MODULATORS AND UPCONVERTERS 5 Frequency Range Power Level Input VSWR Input Impedance Condition 600 to 1000 -3 to +6 1.2:1 200-j200 MHz dBm DC to 100 2.0 to 3.0 VREF ±2 VREF ±2.5 3000 50 0.2 ±3 MHz V V V Ω mV dB ° Ω With external 50Ω termination. At 900MHz, without external 50Ω termination. Modulation Input Frequency Range Reference Voltage (VREF) Modulation (I&Q) Maximum Modulation (I&Q) Input Resistance DC Offset Amplitude Error (I/Q) Quadrature Phase Error 150 RF Output Output Power Output Impedance Output VSWR Broadband Noise Floor Sideband Suppression Carrier Suppression 0 50 1.5:1 -155 25 40 I & Q signals for 0dBm output power. In-phase and quadrature signals. ISIG -IREF and QSIG -QREF for DC balance From 800MHz to 1000MHz. VDD =5V, LO Power=0dBm, LO Freq=900MHz, SSB dBm Ω dBm/Hz dB dB Modulation DC offset externally adjusted for optimum suppression. Suppression is typically better than 25dB without adjustment. Power Down Turn On/Off Time PD Input Resistance Power Down “ON” Power Down “OFF” >1 VCC 0 <100 ns MΩ V V Threshold voltage Threshold voltage 5 3 to 5.5 28 0.5 V V mA mA Specifications Operating Limits Operating Power Down Power Supply Voltage Current 5-2 39 2 Rev B1 010329 RF2402 Function VDD2 2 VDD1 3 PD 4 I SIG 5 6 7 I REF Q REF Q SIG Description Power supply for the RF Output amplifier. An external RF bypass capacitor is needed. The trace length between the pin and the bypass capacitor should be minimized. The ground side of the capacitor should connect immediately to the ground plane. Power supply for all other circuits. An external RF bypass capacitor is needed. Power Down control. When this pin is 0V all circuits are turned off, and when +5V all circuits are operating. This is a high impedance input, internally connected to the gates of a few FETs. To minimize current consumption in power down mode, this pin should be as close to 0V as possible. In order to maximize output power this pin should be as close to +5V as possible during normal operation. Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be 2.5±0.5V. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 40dB it may be tuned ±0.15V (relative to the I SIG DC voltage). Without tuning, it will typically be better than 25dB. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 40dB it may be tuned ±0.15V (relative to the Q SIG DC voltage). Without tuning, it will typically be better than 25dB. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, Q SIG and Q REF also need to be swapped to maintain correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be 2.5±0.5V. 8 LO IN The input of the phase shifting network. This high impedance input can be matched with an external 56Ω termination resistor. This pin is internally connected to ground through a 4kΩ resistor. Putting a DC voltage on this pin is not recommended. However, connecting this pin to ground, e.g. through a shunt inductor, is allowed. 9 PHASE This pin adjusts the phase of the I/Q signals. However, the control is very sensitive and hard to control. Control voltage change for a few degrees adjustment is in the order of 10mV. Device to device and temperature variation are not characterized. Therefore it is not recommended to use this pin; leave it not connected. Do NOT connect it to ground. For compensating large errors in the I/Q signals supplied to the device or in control loops, this pin may prove useful. Rev B1 010329 Interface Schematic I SIG 5 MODULATORS AND UPCONVERTERS Pin 1 I REF Q REF Q SIG LO IN PHASE 5-3 RF2402 Pin 10 Function GND1 11 GND 12 13 GND GND2 14 RF OUT Description Interface Schematic Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Ground connection for other circuits. Keep traces short and connect to ground plane immediately. Same as pin 11. Ground connection for the RF output stage. A good ground connection is especially important at this pin to avoid interference with other circuits. 50Ω output. This pin carries a DC voltage, and an external blocking capacitor is recommended. RF OUT MODULATORS AND UPCONVERTERS 5 Application Schematic VDD 33 pF 1 100 nF 2 POWER DOWN I INPUT ZIN=100 33 pF CMOS 5-4 RF OUTPUT POWER CONTROL 13 3 12 4 11 100 nF 100 Ω VREF I INPUT ZIN=100 50 Ω µstrip 14 100 Ω 100 Ω 100 nF 100 Ω 5 10 Σ +45° -45° 6 9 7 8 33 pF 50 Ω µstrip LO INPUT 56 Ω Rev B1 010329 RF2402 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) 2402400 Rev E C3 100 pF P1-1 C2 100 nF J4 13 3 12 4 11 50 Ω µstrip J1 P1-3 10 5 Σ C5 33 pF Q SIG POWER CONTROL 2 RF OUT +45° -45° 9 6 50 Ω µstrip J2 C4 100 pF 50 Ω µstrip 5 J3 8 7 LO IN MODULATORS AND UPCONVERTERS I SIG C1 33 pF 50 Ω µstrip 14 1 R1 56 Ω P1 P1-1 P1-3 Rev B1 010329 1 VDD 2 GND 3 REF 5-5 RF2402 Evaluation Board Layout 2.020” x 2.020” MODULATORS AND UPCONVERTERS 5 5-6 Rev B1 010329