RF2376 Preliminary 4 CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER Typical Applications • CDMA Cellular Handsets • TDMA Cellular Handsets Product Description 1.80 1.40 .10 MAX .50 .35 TEXT* The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.90 GENERAL PURPOSE AMPLIFIERS 4 3.10 2.70 3.00 2.60 1.30 1.00 .25 .10 9° 1° .90 .70 *When Pin 1 is in upper left, text reads downward (as shown). .37 MIN. All dimensions in mm. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS Package Style: SOT23-6 Features • 50dB Linear Gain Control Range • 27dB Maximum Gain • Single 2.7V to 3.3V Supply • 30mA Supply Current RF OUT 1 6 VCC • High Linearity GND 2 GC 3 ATTEN 5 GND • 7dB Noise Figure 4 RF IN Ordering Information RF2376 RF2376 PCBA Functional Block Diagram Rev A2 010829 Cellular TDMA/CDMA Linear Variable Gain Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-43 RF2376 Preliminary Absolute Maximum Ratings Parameter Supply Voltage DC Current Operating Ambient Temperature Storage Temperature Parameter GENERAL PURPOSE AMPLIFIERS 4 Rating Unit 0 to +5.0 100 -20 to +85 -40 to +150 VDC mA °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit VCC =2.8V, VGC =2.0V, T=25°C Overall Operating Frequency Usable Frequency Range Maximum Small Signal Gain Linear Gain Control Range Gain Control Slope Input VSWR Output IP3 Noise Figure Maximum Average Output Power Adjacent Channel Power Rejection Alternate Channel Power Rejection Maximum Average Output Power Condition 24 50 +22 836 800 to >1000 27 70 1.5:1 +25 7 +8 -33 30 MHz MHz dB dB dB/V 2.5:1 Maximum gain. Over entire gain control range -32 dBm dB dBm dBc Maximum gain TDMA modulation TDMA modulation; POUT =+8dBm -57 dBc TDMA modulation; POUT =+8dBm +10 dBm Adjacent Channel Power Rejection -53 dBc Alternate Channel Power Rejection -67 dBc 2.8 2.7 to 3.3 0 to 2.0 30 34 V V V mA mA mA mA CDMA modulation; VCC =3.0V, maximum gain setting, ACPR<-52dBc. CDMA modulation; VCC =3.0V. For PIN >-23dBm, adjustment of PIN is required to maintain ACPR performance over gain control range. For PIN < -23dBm, ACPR performance is maintained over entire gain control range. CDMA modulation; POUT =+10dBm, VCC =3.0V. T = 25°C Specifications Operating range -61 Power Supply Supply Voltage Gain Control Voltage Supply Current VGC Current 4-44 25 40 18 1.5 VCC =2.8V, VGC =2.0V VCC =3.0V, VGC =2.0V VCC =2.8V, VGC =0.4V Rev A2 010829 RF2376 Preliminary Function RF OUT 2 GND 3 GC 4 5 RF IN GND 6 VCC Description Interface Schematic RF output pin. This pin is DC coupled and requires VCC through a bias inductor sized accordingly to provide a high pass transformation with a series capacitor. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Analog gain control pin. This pin controls the gain of the IC. Minimum gain occurs at VGC <0.4V and maximum gain is achieved with VGC =2.0V. 50dB of linear gain control with little variation of input P1dB is available. RF input pin. This pin is AC coupled. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Power supply. This pin should be connected to a regulated supply and requires a bypass capacitor. Voltage is supplied through this pin to the first stage collector; this voltage also controls the bias. Gain may be tuned by adjusting the value of the feed inductor. 4 GENERAL PURPOSE AMPLIFIERS Pin 1 Application Schematic 47 nH RF IN 4 5 ATTEN 2 2.7 pF 4.7 nH VCC 6 RF OUT 1 47 nF 12 nH Note orientation of package in this schematic. Rev A2 010829 GC 3 VCC 4-45 RF2376 Preliminary Evaluation Board Schematic P1 1 VGC 2 GND P1-3 3 VREG/VCC P1-4 4 VREG/VCC 5 GND VREG/VCC C16 1 uF C9 33 pF + P1-1 C4 47 nH CON5 4 C2* GENERAL PURPOSE AMPLIFIERS J1 RF IN L1 6.8 nH 4 C1 100 pF 5 VREG L2 4.7 nH 6 2376400B C3 47 nF 4-46 ATTEN 3 VGC 2 R1* DNI C5 47 nF L3 12 nH C7 100 pF 1 C6 2.7 pF J2 RF OUT Note orientation of package in this schematic. C8 33 pF Rev A2 010829 RF2376 Preliminary Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.028”; Board Material FR-4 GENERAL PURPOSE AMPLIFIERS 4 Rev A2 010829 4-47 RF2376 Preliminary Gain versus VGC (CDMA) 40.0 Noise Figure versus VGC @ Room Temperature (Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V) (Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.5V) 30.0 Gain[dB]@-40C 30.0 Gain[dB]@+25C NF [dB] 25.0 Gain[dB]@+85C GENERAL PURPOSE AMPLIFIERS 4 Noise Figure (dB) Gain (dB) 20.0 10.0 0.0 20.0 15.0 -10.0 10.0 -20.0 5.0 -30.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VGC (V) VSWR versus VGC @ Room Temperature (Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.1V) 4.5 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 VGC (V) ACPR versus VGC (CDMA) 0.0 (Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V) ACPR[dBc]@-40C RF INPUT PORT [S11] 4.0 -10.0 RF OUTPUT PORT [S22] ACPR[dBc]@+25C Adjacent Channel Power (dBc) ACPR[dBc]@+85C 3.5 VSWR S11 3.0 2.5 2.0 1.5 -20.0 -30.0 -40.0 -50.0 1.0 -60.0 0.5 -70.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 VGC (V) 0.0 VGC (V) Alternate Channel Power versus VGC (CDMA) Gain versus VGC (Single Tone Test) (Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V) (RF Frequency 836MHz @ -17dBm, VCC=3.0V, VGC=2.0V to 0.0V) 40.0 Gain [dB] @ -40C Altr.Ch.Power[dBc]@-40C -10.0 Altr.Ch.Power[dBc]@+25C 30.0 20.0 -30.0 10.0 Gain (dB) Alternate Channel Power (dBc) -20.0 -40.0 -50.0 0.0 -10.0 -60.0 -20.0 -70.0 -30.0 -80.0 -90.0 4-48 Gain [dB] @ +25C Gain [dB] @ +85C Altr.Ch.Power[dBc]@+85C -40.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 VGC (V) VGC (V) Rev A2 010829 RF2376 Preliminary IGC versus VGC (VCC=3.0V, VGC=2.0V to 0.0V) 1500.0 Gain & OIP3 versus VGC Gain [dB] Igc [uA] 1000.0 (CDMA Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.0V) 40.0 30.0 500.0 OIP3 [dBm] 20.0 0.0 Gain (dB) IGC (uA) 10.0 -500.0 -1000.0 0.0 -10.0 -1500.0 -20.0 -2000.0 GENERAL PURPOSE AMPLIFIERS -3000.0 -40.0 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 2. 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 VGC (V) VGC (V) 40.0 Gain versus Input Power Output Power versus Input Power (Frequency 836MHz, VCC=3.0V) (Frequency 836MHz, VCC=3.0V, VGC=2.0V) 30.0 Gain[dB]@Vgc 2.0V Gain[dB]@Vgc 1.5V Gain[dB]@Vgc 1.0V Gain[dB]@Vgc 0.5V Gain[dB]@Vgc 0.3V 30.0 20.0 10.0 Output Power (dBm) 20.0 10.0 Gain (dB) 4 -30.0 -2500.0 0.0 -10.0 -20.0 -10.0 -20.0 -30.0 -40.0 -30.0 -40.0 -25.0 0.0 Pout[dBm]@Vgc 2.0V Pout[dBm]@Vgc 1.5V Pout[dBm]@Vgc 1.0V Pout[dBm]@Vgc .5V Pout[dBm]@Vgc 0.3V -50.0 -20.0 -15.0 -10.0 -5.0 Input Power (dBm) Rev A2 010829 0.0 5.0 10.0 -60.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 Input Power (dBm) 4-49 RF2376 Preliminary GENERAL PURPOSE AMPLIFIERS 4 4-50 Rev A2 010829