SANKEN 2SA1694

2SA1694
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
–8
A
hFE
–120min
IC=–50mA
V
50min∗
VCE=–4V, IC=–3A
A
VCE(sat)
IC=–3A, IB=–0.3A
–1.5max
V
80(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
300typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
20.0min
–3
PC
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
10
–4
–10
5
–0.4
0.4
0.14typ
1.40typ
0.21typ
V CE ( s a t ) – I B Characteristics (Typical)
I B =–10mA
0
0
–1
–2
–3
–4
–4A
0
(V C E =–4V)
300
100
50
–1
–5
125˚C
Transient Thermal Resistance
DC Curr ent Gain h FE
Typ
–0.5
–0.5
25˚C
100
–30˚C
50
30
–0.02
–8
–0.1
–0.5
f T – I E Characteristics (Typical)
–1.5
–1
–5 –8
3
1
0.5
0.3
1
10
100
1000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
–1.0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
–0.1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
30
–0.02
0
–0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
mp)
–2A
0
Collector-Emitter Voltage V C E (V)
D C Cur r ent Gai n h F E
–2
I C =–8A
e Te
–1
(Cas
–2
–4
–30˚C
–25mA
–6
mp)
–50mA
–4
–2
e Te
–7 5m A
Cas
mA
˚C (
–100
–6
(V CE =–4V)
125
5
1.4
E
–8
Collector Current I C (A)
–1
5.45±0.1
C
I C – V BE Temperature Characteristics (Typical)
θ j - a ( ˚ C/W)
0
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
50
Collector Current I C (A)
–3
–2
A
0m
0.65 +0.2
-0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
–3
A
2
3
B
VCC
(V)
0m
ø3.2±0.1
5.45±0.1
I C – V CE Characteristics (Typical)
2.0±0.1
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
–8
4.8±0.2
b
IB
Tstg
a
mp)
IC
e Te
VEBO
(Cas
–120
15.6±0.4
9.6
25˚C
VCEO
19.9±0.3
V
1.8
VCB=–120V
–120
5.0±0.2
ICBO
VCBO
2.0
Unit
Symbol
4.0
2SA1694
Unit
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
2SA1694
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
–20
–5
DC
s
he
40
at
si
nk
Without Heatsink
Natural Cooling
ite
–0.5
fin
–1
60
In
10
100ms
ith
Co lle ctor Cu rren t I C (A)
Typ
20
–10
m
W
Cut- off F req uency f T (MH Z )
10
Maxim um Power Dissip ation P C (W)
30
20
Without Heatsink
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
28
5
8
–0.1
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
12 5
Ambient Temperature Ta(˚C)
150