2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A PC 100(Ta=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) V VCE=–12V, IE=1A 60typ MHz VCB=–80V, f=1MHz 110typ pF VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 5 –500 500 0.25typ 0.8typ 0.2typ V CE ( sat ) – I B Characteristics (Typical) 0 –1 0 –2 –3 0 –4 0 –0.5 –1.0 –1.5 (V C E =–4V) 200 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 100 Typ 50 –5 –1 –10 –30˚C 50 30 –0.02 –0.1 –0.5 f T – I E Characteristics (Typical) ) emp p) eT Cas ˚C ( –2 –1 –5 –10 3 1 0.5 0.2 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) si nk M aximum Power Dissip ation P C (W) 50 at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –2 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –0.5 1 C –1 20 0.1 D W 40 –5 ms T yp 10 Cu t-of f Fr eque ncy f T ( MH Z ) –10 60 0 0.02 100 –30 80 Collecto r Cur rent I C (A) DC Curr ent Gain h FE –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 p) –2 –5A Collector-Emitter Voltage V C E (V) 100 –4 Tem –1 –30 I B =–20m A –2 I C =–10A Tem –40mA se –4 –6 se –60mA –2 (Ca –8 0m A –6 –8 ˚C mA –120 A 0 1 – 0m (V C E =–4V) 125 –1 1.4 E –10 Collector Current I C (A) A 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) –4 m 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 00 Collector Current I C (A) –8 00 2 3 B IC (A) –2 ø3.2±0.1 5.45±0.1 RL (Ω) A 60m 2.0±0.1 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 4.8±0.2 b –2.0max ■Typical Switching Characteristics (Common Emitter) –10 a Ca Tstg 50min∗ C( –150 25˚ VCEO 15.6±0.4 9.6 1.8 V –150 5.0±0.2 Unit 2.0 Ratings VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Unit 4.0 ■Electrical Characteristics Symbol Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 11