2SC4131 LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF Tstg ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 20 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ 4 I B =7mA 0 0 2 4 15A 0 0.002 0.01 0.1 1 h FE – I C Temperature Characteristics (Typical) 12 5˚ C 500 2 5 ˚C – 3 0 ˚C 100 1 70 0.02 10 15 0.1 Collector Current I C (A) 1 10 15 0.3 1 10 5 ite he at si nk 10 fin 5 20 Without Heatsink 0.4 3 40 In M aximum Power Dissipa ti on P C (W) s ith Collect or Curr ent I C (A) 0m Without Heatsink Natural Cooling 10 1000 W DC s 10 s 1 5 100 P c – T a Derating m 10 t on 1 0.5 Time t(ms) 10 tf 0.5 1 60 1m 0.5 Collector Current I C (A) θ j-a – t Characteristics Safe Operating Area (Single Pulse) V C C 20V I C =5A I B1 =–I B2 =80mA 1.5 1.0 3 40 1 0.1 0.08 0.1 0.5 Collector Current I C (A) t on •t stg •t f – I C Characteristics (Typical) t o n • t s t g • t f ( µ s) Transient Thermal Resistance DC Cur rent Gain h FE Typ 100 Switching Time DC Cur rent Gain h FE (V C E =1V) 1000 t stg 0 Base-Emittor Voltage V B E (V) (V C E =1V) 5 0 2 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 ) 5A 3A I C =1 A 6 1000 70 0.02 5 10A Collector-Emitter Voltage V C E (V) 500 mp 0.5 Te 15mA 10 se 25mA E (V C E =1V) (Ca 8 1.0 θ j - a (˚C /W) Collector Current I C (A) 40mA 3.35 Weight : Approx 2.0g a. Type No. b. Lot No. 15 1.3 ˚C 80mA 12 C 125 85mA 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 15 4.4 B V CE ( sat ) – I B Characteristics (Typical) +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 0.8±0.2 50min 5.5 hFE µA IC=25mA 1.6 A VEB=15V V(BR)CEO mp) 15(Pulse25) IC IEBO 3.45 ±0.2 e Te V 5.5±0.2 (Cas 15 10max 15.6±0.2 ) V VEBO µA –30˚C 50 10max emp VCEO VCB=100V ICBO se T V Unit (Ca 100 2SC4131 25˚C VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 23.0±0.3 Unit 9.5±0.2 ■Electrical Characteristics 2SC4131 Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 89