SANKEN 2SC4467

2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)
2SC4467
Unit
ICBO
VCB=160V
10max
µA
VCEO
120
V
IEBO
VEB=6V
10max
µA
VEBO
6
V
V(BR)CEO
IC
8
A
hFE
120min
IC=50mA
V
VCE=4V, IC=3A
50min∗
19.9±0.3
Symbol
A
VCE(sat)
IC=3A, IB=0.3A
1.5max
V
80(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
200typ
pF
–55 to +150
°C
∗hFE Rank
20.0min
3
PC
5.45±0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
40
10
4
10
–5
0.4
–0.4
0.13typ
3.50typ
0.32typ
0
0
1
2
3
0
4
0
0.1 0.2 0.3 0.4
0
(V C E =4V)
200
Typ
50
1
5
100
25˚C
–30˚C
50
20
0.02
8
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
100
0.1
Collector Current I C (A)
0.5
)
Temp
mp)
(Case
1.0
1.5
1
5
3
1
0.5
0.3
8
1
10
100
1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
e Te
0.5
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
40
80
20
10
10
s
40
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
10
1
60
fin
20
DC
In
Collector Cur rent I C (A)
5
Typ
ith
M aximum Power Dissipa ti on P C ( W)
30
m
100ms
W
Cut-o ff Fr equ ency f T (M H Z )
DC Curr ent Gain h FE
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.5
mp)
4A
2A
0.5 0.6 0.7 0.8 0.9 1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
e Te
I C =8A
Collector-Emitter Voltage V C E (V)
20
0.02
2
–30˚C
I B =10mA
1
(Cas
2
Cas
20mA
4
˚C (
4
6
25˚C
50m A
2
125
75 m A
6
(V C E =4V)
8
3
Collector Current I C (A)
A
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/W)
m
100
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
A
0m
20
350m
Collector Current I C (A)
1
A
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
m
50
2
3
1.05 +0.2
-0.1
VCC
(V)
8
2.0±0.1
ø3.2±0.1
O(50 to100), P(70 to140), Y(90 to180)
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
b
IB
Tstg
15.6±0.4
9.6
1.8
Conditions
V
5.0±0.2
Unit
160
2.0
2SC4467
VCBO
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0
■Electrical Characteristics
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
Without Heatsink
0
–0.02
–0.1
–1
Emitter Current I E (A)
–8
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
107