2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF Tstg V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 250 1 10 –5 0.15 –0.45 0.7max 4.0max 0.5max 100m A 1 I B =40mA 1 2 3 5 I C /I B =5 Const. 4 1.0 V B E (sat) 0.5 0.1 0.5 1 0 5 t on •t stg • t f – I C Characteristics (Typical) –55˚C 10 1 5 6 t s tg V C C 250V I C :I B1 :I B 2 = 1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 1000 P c – T a Derating 50 50 100 500 Collector-Emitter Voltage V C E (V) 1000 nk 0.01 10 si 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% at 0.1 30 he Co lle ctor Cu rren t I C (A) 0.5 40 ite 500 1 fin 100 Collector-Emitter Voltage V C E (V) 130 100 Time t(ms) In Without Heatsink Natural Cooling 50 10 ith 0.1 10 1 s 0.5 0.01 0.3 7 5 µs 1 0.05 0.5 M aximum Po wer Dissipat io n P C (W) 0µ 3 1 W Collecto r Cur rent I C (A) 50 10 1 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 7 5 Transient Thermal Resistance 7 5 t on • t st g• t f ( µ s) 25˚C Switching T im e D C Cur r ent Gai n h F E 125˚C 0.5 0.5 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 2 V C E (sat) Collector-Emitter Voltage V C E (V) 5 4 0.02 3 1 0 0.03 0.05 4 Collector Current I C (A) 2 40 I C – V BE Temperature Characteristics (Typical) 1.5 θ j - a (˚C /W) Collector Current I C (A) 150 mA 0 1.4 (V CE =4V) 300mA 200 mA 0 2.5 Weight : Approx 2.6g a. Type No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 40 1.35 B C E RL (Ω) 0m b 2.5 VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 3 4.8±0.2 ø3.75±0.2 a 4.0max VCEO 10.2±0.2 3.0±0.2 VCB=800V V 16.0±0.7 ICBO Unit 900 8.8±0.2 Unit Symbol External Dimensions MT-25(TO220) (Ta=25°C) 2SC5239 VCBO IC ■Electrical Characteristics Conditions 2SC5239 Symbol 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150