SANKEN FN812

Power Transistor FN812
ICBO
IEBO
VCEO
hFE
VCE (sat)
(Ta=25ºC)
Unit
µA
µA
V
Ratings
10max
10max
100min
70min
0.3max
External Dimensions FM20 (full-mold)
10.0
V
a
b
Typical Switching Characteristics
VCC
(V)
12
RL
(Ω)
4
IC
(A)
3
VBB1
(V)
10
VBB2
(V)
–5
IB1
(mA)
30
4.2
2.8
3.3
C0.5
16.9
Test Conditions
VCB = 120V
VEB = 6V
IC = 50mA
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
2.6
IB2
(mA)
–30
t on
(µs)
1.0
t stg
(µs)
2.0
tf
(µs)
0.5
1.35
1.35
0.85
2.54
(13.5)
Symbol
4
Electrical Characteristics
Unit
V
V
V
A
A
W
ºC
ºC
8.4
Ratings
120
100
6
8 (pulse 12)
3
35 (Tc=25ºC)
150
–55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.8
Absolute Maximum Ratings (Ta=25ºC)
0.45
2.54
2.2
a) Type No.
b) Lot No.
B C E
(Unit: mm)
■ IC — VCE Characteristics (typ.)
300m
A
20
0m
A
8
0m
A
0m
A
10
15
■ IC — VBE Temperature Characteristics (typ.)
■ VCE (sat) — IB Characteristics (typ.)
8
2
mA
75
A
50m
25mA
4
Ic = 3A
0
1
2
3
0
4
5
10
50 100
0.5
100
5
8
30
0.01
0.05 0.1
IC (A)
Characteristics
10
5
NO
0.5
1
5 8
0.1
0.05
0.0002 0.001
0.01
0.1
100
se
1m
c
30
20
20
0•
20
0.5
10
100
nk
si
at
he
5º
C)
1
ite
fin
in
PC (W)
c
=2
ith
W
se
(T
ec
0m
D.
C
c
IC (A)
10
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
ms
10
10
5
20
fT (MHz)
1
40
10
10
Ta = 25ºC
■ PC — Ta Derating
20
Typ
)
ºC
25
t (sec)
■ Safe Operating Area (single pulse)
(VCE = 12V)
30
FIN
=
(Ta
1
0.5
IC (A)
■ f T — IE Characteristics (typ.)
1.5
Single Pulese
50
1
1.0
50
(ºC/W)
hFE
50
j-a — t
j-a
75ºC
25ºC
–55ºC
Typ
100
■
(VCE = 4V)
500
Tc = 125ºC
hFE
0
VBE (V)
■ hFE — IC Temperature Characteristics (typ.)
(VCE = 4V)
500
0.5
0
500 1000 2000
IB (mA)
■ hFE — IC Characteristics (typ.)
0.05 0.1
Tc = –55ºC
25ºC
75ºC
125ºC
2
Ic = 1A
VCE (V)
30
0.01
4
Ic = 5A
IB = 10mA
2
0
1
IC (A)
6
VCE (sat) (V)
IC (A)
6
0•
2
• 10
0•2
Without heatsink
0
–0.01
–0.05 –0.1
–0.5 –1
IE (A)
60
–5 –10
0.1
3
5
10
50
VCE (V)
100
200
0
0
50
100
Ta (ºC)
150