SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D Automotive − 42-V Power Bus − DC/DC Conversion − Motor Drivers D TO-263 G G D S Top View S Ordering Information: SUM110N10-09 SUM110N10-09-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd Operating Junction and Storage Temperature Range V 110a 87a 440 IAR 75 EAR 280 PD Unit 437.5c 3.75 A mJ W TJ, Tstg −55 to 200 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d RthJA 40 RthJC 0.4 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70677 S-32523—Rev. C, 08-Dec-03 www.vishay.com 1 SUM110N10-09 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current IDSS On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 4 VDS = 100 V, VGS = 0 V, TJ = 200_C 10 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea gfs VDS = 15 V, ID = 30 A nA mA mA A 0.0078 0.0095 0.017 VGS = 10 V, ID = 30 A, TJ = 200_C Forward Transconductancea V W 0.025 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 6700 750 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 280 110 160 24 VDS = 50 V,, VGS = 10 V,, ID = 85 A Qgd nC 24 Rg 1.5 6.2 td(on) 20 30 tr 125 200 55 85 130 195 td(off) VDD = 50 V, RL = 0.6 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V 1.0 1.5 V 70 140 ns IF = 50 A, di/dt = 100 A/ms 5.5 10 A 0.19 0.35 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70677 S-32523—Rev. C, 08-Dec-03 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 6V VGS = 10 thru 7 V 200 I D − Drain Current (A) I D − Drain Current (A) 200 150 100 5V 50 150 100 TC = 125_C 50 25_C −55_C 4V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.015 g fs − Transconductance (S) 200 r DS(on) − On-Resistance ( W ) TC = −55_C 25_C 150 125_C 100 50 0 0.012 VGS = 10 V 0.009 0.006 0.003 0.000 0 20 40 60 80 100 120 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 6000 4000 Crss 100 120 Gate Charge 20 8000 2000 80 ID − Drain Current (A) Capacitance 10000 60 Coss 0 VDS = 50 V ID = 85 A 16 12 8 4 0 0 25 50 75 VDS − Drain-to-Source Voltage (V) Document Number: 70677 S-32523—Rev. C, 08-Dec-03 100 0 50 100 150 200 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110N10-09 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) r DS(on) − On-Resistance (W) (Normalized) 2.5 On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 30 A I S − Source Current (A) 3.0 2.0 1.5 1.0 TJ = 150_C 10 TJ = 25_C 0.5 0.0 −50 −25 0 25 50 75 1 0 100 125 150 175 200 0.3 TJ − Junction Temperature (_C) 1000 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 125 120 ID = 10 mA V(BR)DSS (V) 100 I Dav (a) IAV (A) @ TA = 25_C 10 IAV (A) @ TA = 150_C 115 110 105 100 1 95 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 90 −50 −25 0 25 50 75 100 125 150 175 200 TJ − Junction Temperature (_C) Document Number: 70677 S-32523—Rev. C, 08-Dec-03 SUM110N10-09 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 120 100 10 ms I D − Drain Current (A) I D − Drain Current (A) 100 80 60 40 100 ms 10 1 20 0 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Limited by rDS(on) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 70677 S-32523—Rev. C, 08-Dec-03 www.vishay.com 5