SANKEN SLA4313

SLA4313
NPN
Silicon Epitaxial Planar
PNP
□Absolute maximum ratings
Parameter
（Ta＝25℃）
Symbol
NPN
PNP
Unit
Collector-Base Voltage
VCBO
35
−35
V
Collector-Emitter Voltage
VCEO
35
−35
V
Emitter-Base Voltage
VEBO
6
−6
V
Collector Current
IC
5
−5
A
Collector Current
ICP
8（Pw≦1ms, Du≦50%）
−8（Pw≦1ms, Du≦50%）
A
Base Current
IB
1
−1
A
5（Ta＝25℃）
PT
Total Power Dissipation
Isolation Voltage
VISO
Storage Temperature
Tstg
W
25（Tc＝25℃）
1000（Between fin and lead pin, AC）
Vrms
−40 to ＋150
℃
□Electrical characteristics
Parameter
（Ta＝25℃）
Symbol
Collector Cut-off Current
ICBO
IEBO
Emitter Cut-off Current
Collector-Emitter Voltage
VCEO
hFE
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VF
Diode Forward Voltage
□Equivalent circuit diagram
NPN
PNP
10μA max
−10μA max
（VCB＝35V）
（VCB＝−35V）
20mA max
−20mA max
（VEB＝6V）
（VEB＝−6V）
35V min
−35V min
（IC＝25mA）
（IC＝−25mA）
50min
50min
（VCE＝4V, IC＝3A）
（VCE＝−4V, IC＝−3A）
0.5V max
−0.5V max
（IC＝3A, IB＝100mA）
（IC＝−3A, IB＝−100mA）
1.3V max
−1.3V max
（IC＝3A, IB＝100mA）
（IC＝−3A, IB＝−100mA）
1.8V max
1.8V max
（IF＝2A）
（IF＝2A）
□External dimensions（Unit:
±0.2
31.0
φ3.2±0.15
7
10
Ellipse
3.2±0.15×3.8
24.4±0.2
mm）
4.8±0.2
1.7±0.1
16.0±0.2
13.0±0.2
2.7
8
12
9.5 min
R
9
11
＋0.2 0.85 −0.1
1.2±0.15
4
2
1.45±0.15
0.55 ＋0.2 −0.1
2.2±0.7
11×P2.54±0.7＝27.94±1.0
5
1
31.5 max
R
3
98
R: 600Ω
6
1 2 3 4 5 6 7 8 9 10 1112
Pin number
Weight: Approx. 6g
□Characteristic Curves
1
＝
Ta
˚C
25
100
50
20
0.02
0.05
0.1
0.5
1
5
10
500
75˚C
5˚C
12
＝
Ta
100
˚C
25
50
20
−0.02 −0.05−0.1
−0.5 −1
−5 −10
3
2
1
Collector Current IC (A)
Collector Current IC (A)
0
0
0.5
25˚C
C
75˚
˚C
25
(Typical NPN) (VCE＝4V)
4
Collector Current IC (A)
DC Current Gain hFE
DC Current Gain hFE
(Typical PNP) (VCE＝−4V)
1000
25˚C
(Typical NPN) (VCE＝4V)
1000
500
IC−VBE
Temperature Characteristics
hFE−IC Temperature Characteristics
Ta＝1
hFE−IC Temperature Characteristics
75˚C
1.0
1.5
Base-Emitter Voltage VBE (V)
VCE(sat)−IC
Temperature Characteristics
＝
Ta
0
0.2
0.5
˚C
25
5
1
75˚C
−0.5
25
＝1
Ta
0
−0.2
10
−0.5
˚C
C
25˚
−5
−1
Collector Current IC (A)
Collector Current IC (A)
(Typical PNP) (VCE＝−4V)
−3
−2
−1
25˚C
˚C
−4
25˚C
5
12
(Typical PNP) (IC/IB＝10)
−10
Ta＝1
75˚C
0.5
IC−VBE
Temperature Characteristics
Collector Current IC (A)
(Typical NPN) (IC/IB＝10)
10
Collector-Emitter
Saturation Voltage
VCE(sat) (V)
Collector-Emitter
Saturation Voltage
VCE(sat) (V)
VCE (sat)−IC
Temperature Characteristics
75˚C
VCE (sat)−IB Characteristics
(Typical NPN)
3
Collector-Emitter Saturation Voltage
VCE(sat) (V)
Collector-Emitter Saturation Voltage
VCE(sat) (V)
VCE (sat)−IB Characteristics
2
1
IC＝4A
IC＝2A
0
3
5
10
50
100
IC＝−2A
IC＝−1A
0
−2
0.5
75˚C
1
Collector Current IC (A)
−5 −10
−50 −100
−500
5
10
VBE (sat)−IC Temperature Characteristics
Base-Emitter Saturation Voltage
VBE(sat) (V)
Base-Emitter Saturation Voltage
VBE(sat) (V)
(Typical NPN) (IC/IB＝10)
0
0.2
−1.5
Base Current IB (mA)
Ta＝25˚C
125˚C
−1.0
−0.5
500
1.0
0.5
−0.5
−1.0
VBE(sat)−IC Temperature Characteristics
0
0
Base-Emitter Voltage VBE (V)
Base Current IB (mA)
1.5
(Typical PNP)
−1.5
(Typical PNP) (IC/IB＝10)
−1.5
−1.0
Ta＝25˚C
−0.5
0
−0.2
125˚C
−0.5
75˚C
−1
−5
Collector Current IC (A)
99