VISHAY SUD40N04-10A

SUD40N04-10A
New Product
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.010 @ VGS = 10 V
40
0.014 @ VGS = 4.5 V
40
V(BR)DSS (V)
40
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Order Number:
SUD40N04-10A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
40
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 175_C)
_
TC = 25_C
TC = 100_C
Pulsed Drain Current
Avalanche Current
Unit
V
40a
ID
40a
IDM
100
IAR
30
A
Repetitive Avalanche Energyb
L = 0.1 mH
EAR
45
Power Dissipation
TC = 25_C
PD
71c
W
TJ, Tstg
–55 to 175
_C
Operating Junction and Storage Temperature Range
mJ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 10 sec.
Junction-to-Ambientd
Junction-to-Case
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
1.75
2.1
Unit
_C/W
C/W
Notes:
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
Document Number: 71420
S-03269—Rev. A, 26-Mar-01
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SUD40N04-10A
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
VGS(th)
VDS = VGS, IDS = 250 mA
1
IGSS
VDS = 0 V, VGS = 20 V
100
VDS = 32 V, VGS = 0 V
1
VDS = 32 V, VGS = 0 V, TJ = 125_C
50
VDS = 32 V, VGS = 0 V, TJ = 175_C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward
Transconductancea
IDSS
ID(on)
rDS(on)
gfs
VDS = 5 V, VGS = 10 V
3
40
VGS = 10 V, ID = 40 A
0.0075
0.010
0.012
0.016
VGS = 10 V, ID = 40 A, TJ = 175_C
0.015
0.020
VGS = 4.5 V, ID = 10 A
0.011
0.014
VGS = 4.5 V, ID = 10 A, TJ = 125_C
0.018
0.022
VGS = 4.5 V, ID = 10 A, TJ = 175_C
0.022
0.028
20
nA
mA
m
A
VGS = 10 V, ID = 40 A, TJ = 125_C
VDS = 15 V, ID = 40 A
V
40
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
145
Total Gate Chargec
Qg
35
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Timec
Fall Timec
1700
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 40 A
Qgd
370
pF
6
nC
8
td(on)
14
30
tr
VDD = 20 V, RL = 0.5 W
7.5
15
td(off)
ID 40 A, VGEN = 10 V, RG = 2.5 W
30
60
14
30
tf
ns
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Is
40
Pulsed Current
ISM
100
Forward Voltagea
VSD
IF = 40 A, VGS = 0 V
1.0
1.50
V
trr
IF = 40 A, di/dt = 100 A/ms
30
60
ns
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71420
S-03269—Rev. A, 26-Mar-01
SUD40N04-10A
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
120
80
5V
90
I D – Drain Current (A)
I D – Drain Current (A)
VGS = 10 thru 6 V
60
4V
60
40
TC = 125_C
30
20
25_C
3V
0
–55_C
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.030
80
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)
TC = –55_C
25_C
60
125_C
40
20
0.025
0.020
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0.005
0
0.000
0
20
40
60
80
100
0
20
40
80
100
ID – Drain Current (A)
VGS – Gate-to-Source Voltage (V)
Capacitance
Gate Charge
3000
20
V GS – Gate-to-Source Voltage (V)
2500
C – Capacitance (pF)
60
Ciss
2000
1500
1000
Coss
500
Crss
0
0
VGS = 20 V
ID = 40 A
16
12
8
4
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
Document Number: 71420
S-03269—Rev. A, 26-Mar-01
40
0
10
20
30
40
50
60
Qg – Total Gate Charge (nC)
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SUD40N04-10A
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
2.5
100
2.0
TJ = 150_C
I S – Source Current (A)
r DS(on) – On-Resistance ( Ω )
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TJ = 25_C
10
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (_C)
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
50
Limited
by rDS(on)
100
I D – Drain Current (A)
I D – Drain Current (A)
40
30
20
10
0
10 ms
100 ms
10
1
1 ms
10 ms
100 ms
dc
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 71420
S-03269—Rev. A, 26-Mar-01