SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 60 "85 a " 0.0072 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N06-05 Top View SUP85N06-05 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range ID V "85a "85a IDM "240 IAR "75 EAR Unit 280 A mJ 250c PD 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71113 S-20556—Rev. C, 22-Apr-02 www.vishay.com 2-1 SUP/SUB85N06-05 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) V 3 VDS = 48 V, VGS = 0 V, TJ = 125_C 50 VDS = 48 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A 0.0044 0.0052 VGS = 4.5 V, ID = 20 A 0.0059 0.0072 VDS = 15 V, ID = 30 A W 0.0085 VGS = 10 V, ID = 30 A, TJ = 175_C gfs mA m A VGS = 10 V, ID = 30 A, TJ = 125_C Forward Transconductancea nA 0.010 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 570 Total Gate Chargec Qg 155 Gate-Source Chargec Qgs 28 Gate-Drain Chargec Qgd 44 Turn-On Delay Timec td(on) 15 25 tr 90 130 95 140 105 150 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 7560 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 85 A VDD = 30 V, RL = 0.4 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W tf 1050 pF 220 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V 1.1 1.4 V 50 85 ns IF = 85 A, di/dt = 100 A/ms 2.7 5 A 0.067 0.21 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71113 S-20556—Rev. C, 22-Apr-02 SUP/SUB85N06-05 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 5 V 160 I D – Drain Current (A) I D – Drain Current (A) 200 4V 150 100 50 120 80 TC = 125_C 40 25_C 3V –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.008 g fs – Transconductance (S) 200 r DS(on) – On-Resistance ( W ) TC = –55_C 25_C 150 125_C 100 50 0 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 20 40 60 80 0 100 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 12000 20 V GS – Gate-to-Source Voltage (V) Ciss 10000 C – Capacitance (pF) 60 8000 6000 4000 Coss 2000 Crss 0 0 VGS = 30 V ID = 85 A 16 12 8 4 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71113 S-20556—Rev. C, 22-Apr-02 30 0 60 120 180 240 300 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB85N06-05 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.5 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 85 A 1.0 0.5 0.0 –50 –25 0 25 50 75 100 125 150 TJ = 150_C 1 0 175 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 80 IAV (A) @ TA = 25_C 70 V(BR)DSS (V) 100 I Dav (a) TJ = 25_C 10 10 ID = 250 mA 60 IAV (A) @ TA = 150_C 50 1 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com 2-4 0.1 1 40 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) Document Number: 71113 S-20556—Rev. C, 22-Apr-02 SUP/SUB85N06-05 New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 100 10 ms 80 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 Limited by rDS(on) 1 ms 10 10 ms 100 ms dc 1 20 0 100 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71113 S-20556—Rev. C, 22-Apr-02 www.vishay.com 2-5