SEME 2N2060A LAB MECHANICAL DATA Dimensions in mm (inches) DUAL AMPLIFIER TRANSISTOR 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. Small Signal Dual Transistor in a TO–77 Hermetic Package. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO–77 METAL PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCER VCBO VEBO IC TJ , Tstg Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Operating and Storage Junction Temperature Range PD Total Device Dissipation PD Total Device Dissipation Semelab plc. @ TA = 25°C Derate above 25°C @ TC = 25°C Derate above 25°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 60V 80V 100V 7V 500mA –65 to +200°C Per Side Total Device 0.5W 0.6W 2.86mW/°C 3.43mW/°C 1.5W 3.0W 8.61mW/°C 17.2mW/°C Prelim. 4/96 SEME 2N2060A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter VCER(sus)* Test Conditions OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = 100mA Min. Typ. Max. Unit RBE £ 10W 80 V VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 30mA IB = 0 60 V V(BR)CBO Collector – Base Breakdown Voltage IC = 100mA IE = 0 100 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 100mA IC = 0 7 V ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VCB = 80V 0.002 IE = 0 TA = 150°C 10 VBE = 5V IC = 0 2.0 IC = 10mA VCE = 5V 25 75 IC = 100mA VCE = 5V 30 90 IC = 1mA VCE = 5V 40 120 IC = 10mA VCE = 5V 50 150 mA nA ON CHARACTERISTICS DC Current Gain hFE VCE(sat) Collector – Emitter Saturation Voltage IC = 50mA IB = 5mA 0.6 VBE(sat) Base – Emitter Saturation Voltage IC = 50mA IB = 5mA 0.9 IC = 50mA VCE = 10V — V SMALL SIGNAL CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hie Input Impedance hib Input Impedance hfe Small Signal Current Gain IC = 1mA hoe Output Admittance f = 1kHz f = 20MHz IE = 0 VCB = 10V 15 pF 85 pF 1000 4000 W 20 30 W 50 150 — 16 mmhos f = 1MHz IC = 0 VBE = 0.5V f = 1MHz IC = 1mA VCE = 5V f = 1kHz IC = 1mA VCB = 10V f = 1kHz VCE = 5V MHz 60 MATCHING CHARACTERISTICS IC = 100mA VCE = 5V 0.9 1.0 IC = 1mA VCE = 5V 0.9 1.0 IC = 100mA VCE = 5V 3.0 IC = 1mA VCE = 5V 5.0 Base – Emitter Voltage Differential IC = 100mA VCE = 5V Change Due To Temperature TA = –55 to +125°C hFE1/hFE2 DC Current Gain Ratio 1 ½VBE1-VBE2½ Base – Emitter Voltage Differential D(VBE1-VBE2) DT 5.0 — mV mV/°C * Pulse Test: tp £ 300ms, d £ 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 4/96