SEME 2N5430 LAB MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON TRANSISTOR This product is available screened in accordance with various military specs. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. EG. 2N5430CECC–QR–B Built and screened in accordance with CECC procedures. Screened to sequence B. TO66 Package. Pin 1 Base Pin 2 Emitter Case Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector – Emitter Voltage 100 V VCBO Collector – Base Voltage 100 V VEBO Emitter – Base Voltage 6V IC Collector Current – Continuous 7A IB Base Current 1A PD Total Device Dissipation at Tcase = 25°C Derate above 25°C Tj Operating and Tstg Storage Junction Temperature Range RqJC Thermal Resistance, Junction to Case. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 40 W 228 mW / °C –65 to 200°C 4.37 °C / W Prelim. 1/94 SEME 2N5430 LAB OFF CHARACTERISTICS Parameter BVCEO (sus)* Collector – Emitter Sustaining Voltage Test Conditions Min IC = 50mA , IB = 0 100 Max Unit V VCE = 90V , IB = 0 100 mA VCE = 90V , VEB(off) = 1.5V 10 mA VCE = 90V , VEB(off) = 1.5V , TC = 150°C 1.0 mA Collector Cutoff Current VCB = Rated VCB , IE = 0 10 mA Emitter Cutoff Current VBE = 6V , IC = 0 100 mA Max Unit ICBO Collector Cutoff Current ICEX Collector Cutoff Current ICBO IEBO ON CHARACTERISTICS Parameter hFE* VCE(sat)* VBE(sat)* DC Current Gain Test Conditions Min IC = 500mA , VCE = 2V 60 IC = 2A , VCE = 2V 60 IC = 5A , VCE = 2V 40 240 Collector – Emitter IC = 2A , IB = 0.2A 0.7 Saturation Voltage IC = 7A , IB = 0.7A 1.2 Base – Emitter IC = 2A , IB = 0.2A 1.2 Saturation Voltage IC = 7A , IB = 0.7A 2.0 — V V DYNAMIC CHARACTERISTICS Parameter fT Current Gain Bandwidth Product Test Conditions IC = 500 mA, VCE = 10V, f = 10 MHz Min Max 30 Unit MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 100 kHz 250 pF Cib Input Capacitance VBE = 2V, IC = 0, f = 100 kHz 1000 pF Max Unit SWITCHING CHARACTERISTICS Parameter Test Conditions Min td tr Delay Time VCC = 40V, VEB(off) = 3V 100 ns Rise Time IC = 2A, IB1 = 200mA 100 ns ts tf Storage Time VCC = 40V, IC = 2A 2.0 ms Fall Time IB1 = IB2 = 200mA 200 ns * Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 % Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/94