SEME-LAB BCU83-SMD

BCU83–SMD
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL PLANAR
SILICON TRANSISTOR
4 .5
1 .0
2 .5
1 .5
4 .2 5 m a x .
1 .6
0 .4 0
0 .4 0
Ideal for high current driver applications
requiring low loss devices
FEATURES
• LOW VCE(SAT)
• HIGH CURRENT
0 .5 0
• HIGH ENERGY RATING
1 .5
3 .0
-
+
*
APPLICATIONS
• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
SOT89
EFFICIENT LOW LOSS DEVICES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
Collector – Emitter voltage
20V
VCBO
Collector – Base voltage
60V
VEBO
Emitter – Base voltage
6V
IC
Collector current
5A
IC(PK)
Peak Collector current
8A
Ptot
Total Dissipation at Tcase = 25°C
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
0.9W
–55 to 150°C
150°C
Prelim. 1/94
BCU83–SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
Parameter
Collector cut–off current
Test Conditions
VCB = 50V IE = 0
IEBO
Emitter cut–off current
VEB = 5V
IC = 0
1.0
IC = 3A
IB = 60mA
0.5
V
IC = 3A
IB = 60mA
0.6
1.5
V
VCE = 2V
IC = 0.5A
100
560
VCE = 2V
IC = 3A
75
VCE(sat)*
VBE(sat)*
Collector – Emitter
saturation voltage
Base – Emitter
saturation voltage
Min.
Typ.
Max.
1.0
Unit.
mA
m
A
hFE*
DC current gain
fT
Transition frequency
VCE = 10V
IC = 50mA
120
MHz
Cob
Output capacitance
VCB = 10V
f = 1MHz
45
pF
—
* Pulse test tp = 300ms , d £ 2%
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 1/94