BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) FEATURES 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 2 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) • ENHANCEMENT MODE 5.25 (0.215) BSC • INTEGRAL PROTECTION DIODE TO–247 Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage BUZ905P -160V BUZ906P -200V VGSS Gate – Source Voltage ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case Magnatec. ±14V @ Tcase = 25°C Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. 125W –55 to 150°C 150°C 1.0°C/W Prelim. 10/94 BUZ905P BUZ906P MAGNA TEC STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. VGS = 10V BUZ905P -160 ID = -10mA BUZ906P -200 Gate – Source Breakdown Voltage VDS = 0 IG = ±100µA ±14 VGS(OFF) Gate – Source Cut–Off Voltage VDS = -10V ID = -100mA -0.15 VDS(SAT)* Drain – Source Saturation Voltage VGD = 0 ID = -8A BVDSX Drain – Source Breakdown Voltage BVGSS Typ. Drain – Source Cut–Off Current V VDS = -10V Forward Transfer Admittance V -12 V mA VDS = -200V -10 BUZ906P yfs* -1.5 -10 BUZ905P VGS = -10V Unit V VDS = -160V IDSX Max. ID = -3A 0.7 2 S Max. Unit DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. Typ. Ciss Input Capacitance 734 Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn–on Time VDS = -20V 120 toff Turn-off Time ID = -5A 60 VDS = 10V 300 f = 1MHz pF 26 ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. Derating Chart 150 CH AN NE L D ISS IP ATION (W ) 125 100 75 50 25 0 0 25 50 75 100 125 150 TC — CASE TEMPERATURE (˚C) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 BUZ905P BUZ906P MAGNA TEC Typical Output Characteristics -9 Typical Output Characteristics -9 -7V -8 -7 TC = 75˚C -7V -7 I D — D R AIN C U RR EN T (A) -6V -6 -5V -5 = P CH -4 -4V 12 5W -3 -3V -2 -6V -6 -5 -5V = P CH I D — D R AIN C U RR EN T (A) -8 TC = 25˚C -4 12 -4V 5W -3 -3V -2 -2V -1 -2V -1 0 0 0 -10 -20 -30 -40 -50 -60 -70 -80 0 -90 -10 -20 V DS — DRAIN – SOURCE VOLTAGE (V) Forward Bias Safe Operating Area -10 -30 -40 -50 -60 -70 -80 -90 V DS — DRAIN – SOURCE VOLTAGE (V) Transconductance 100 V DS = -20V TC = 25˚C ER AT IO G FS — TR AN SC ON DU C TAN CE (S) OP N -1 -0.1 BUZ906 -0.01 -1 -10 200V BUZ905 160V I D — D R AIN C U RR EN T (A) DC 10 TC = 25˚C TC = 75˚C 1 0.1 -100 0 -1000 -1 -2 V DS — DRAIN – SOURCE VOLTAGE (V) -3 -4 -5 -6 -7 -8 I D — DRAIN CURRENT (A) Drain – Source Voltage vs Gate – Source Voltage -10 V DS = -10V -8 -7 I D = -6A I D — D RA IN C UR R EN T (A) V DS — DR AIN – S OU RC E V OLTA GE (V ) TC = 25˚C -8 Typical Transfer Characteristics -9 -6 -4 I D = -3A TC = 25˚C -6 TC = 75˚C -5 TC = 100˚C -4 -3 -2 -2 I D = -1A -1 0 0 0 -2 -4 -6 -8 -10 -12 -14 0 V GS — GATE – SOURCE VOLTAGE (V) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. -1 -2 -3 -4 -5 -6 -7 -8 V GS — GATE – SOURCE VOLTAGE (V) Prelim. 10/94