BUL58BSMD MECHANICAL DATA Dimensions in mm 3 .6 0 (0 .1 4 2 ) M a x . • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 2 FEATURES 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. SMD1 PACKAGE Pad 1 – Base Pad 2 – Collector • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pad 3 – Emitter • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage (IB = 0) 90V VEBO Emitter – Base Voltage (IC = 0) 10V IC Collector Current 7A IC(PK) Peak Collector Current 10A IB Base Current 2A Ptot Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Tstg Semelab plc. Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 50W 0.28W/°C –65 to 200°C Prelim. 7/00 BUL58BSMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 180 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector Cut–Off Current ICEO Collector Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Unit V VCB = 180V IB = 0 Max. 90 10 TC = 125°C 100 VCE = 80V 100 IC = 0 m A m A m A 10 VEB = 9V TC = 125°C IC = 0.3A VCE = 4V 30 80 IC = 3A VCE = 4V 25 60 IC = 5A VCE = 4V 20 50 TC = 125°C VCE(sat)* Typ. 100 — IC = 1A IB = 0.1A 0.2 Collector – Emitter Saturation Voltage IC = 3A IB = 0.3A 0.6 IC = 6A IB = 0.6A 1.5 IC = 3A IB = 0.3A 1.1 IC = 6A IB = 0.5A 2.0 V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 20V f = 1MHz 44 pF V * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00