BFX38 BFX39 BFX40 BFX41 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) APPLICATIONS 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) • General Purpose Industrial Applications 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . DESCRIPTION 5 .0 8 (0 .2 0 0 ) ty p . ! 2 .5 4 (0 .1 0 0 ) The BFX38-41 are ailicon planar epitaxial PNP transitors in Jedec TO39 metal case, designed for a wide variety of applications. 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 4 5 ° TO39 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BFX38 BFX39 BFX40 BFX41 -75V VCBO Collector – Base Voltage -55V VCEO Collector – Emitter Voltage -55V -75V VEBO Emitter – Base Voltage -5V IC Collector Current -1A Ptot Total Power Dissipation Tamb < 25°C Tcase < 25°C Tstg,Tj Storage and Junction Temperature Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 0.8W 4W –55 to 200°C Prelim.9/00 BFX38 BFX39 BFX40 BFX41 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter ICBO V(BR)CBO Collector Cutoff Current Collector-Base Breakdown Voltage Test Conditions BFX38 VCB = - 40V BFX39 Tamb = 125°C BFX40 VCB = - 50V BFX41 Tamb = 125°C BFX38 IC = -10mA IE = 0 IC = -10mA IE = 0 - 75 IC = -10mA IE = 0 -55 IC = -10mA IE = 0 -75 IE = 10mA IC = 0 -5 BFX39 BFX40 BFX41 BFX38 VCEO(SUS)* Collector Emitter Sustaining BFX39 Voltage BFX40 BFX41 V(BR)EBO VCE(SAT)* VBE(SAT)* Emitter - Base Breakdown Voltage Collector- Emitter Saturation Voltage Base - Emitter Saturation Voltage Min. ALL IE = 0 IE = 0 Typ. Max. Unit - 0.2 - 50 nA -0.25 -50 mA - 0.2 - 50 nA -0.25 -50 mA -55 V V V IE = -15mA - 0.12 - 0.15 IC = - 500mA IE = - 50mA - 0.3 - 0.5 IC = -150mA IE = -15mA - 0.8 - 0.9 IC = - 500mA IE = - 50mA BFX38 BFX40 -0.9 -1.1 ALL ALL IC = -150mA IC = - 100mA VCE = - 5V 60 90 *IC = - 100mA VCE = - 5V 85 130 *IC = - 500mA VCE = - 5V 60 120 VCE = - 5V 30 45 *IC = - 100mA VCE = - 5V 40 70 *IC = - 500mA VCE = - 5V 25 65 V V BFX39 BFX41 IC = - 100mA hFE DC Current Gain *IC = - 1A VCE = - 5V BFX38 30 BFX39 15 BFX40 25 BFX41 10 — *IC = - 100mA VCE = - 5V Tamb = - 55°C Semelab plc. BFX38 BFX40 30 BFX39 BFX41 15 Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.9/00 BFX38 BFX39 BFX40 BFX41 Parameter fT Transitions Frequency CEBO Emitter - Base Capacitance CCBO Collector - Base Capacitance ton Turn-on time ts Storage Time tf Fall Time Test Conditions IC = -50mA VCE = -10V f =100MHz IC = 0 VEB = -0.5V f =1MHz IE = 0 VCB = -10V f =1MHz IC = - 500mA VCC = -30V IB1 = -50mA IC = - 500mA VCC = - 30V IB1 = - IB2 = -50mA IC = - 500mA VCC = - 30V IB1 = - IB2 = -50mA Min. Typ. 100 150 75 Max. Unit MHz 120 pF 15 20 33 100 160 350 27 50 ns * Pulsed: pulse duration = 300ms, duty cycle = 1% THERMAL CHARACTERISTICS Rqth(j-case) Thermal Resistance Junction to case 44 °C/W Rqth(j-amb) 219 °C/W Thermal Resistance Junction to ambient Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.9/00