TetraFET D2290UK METAL GATE RF SILICON FET MECHANICAL DATA Top View E 3 4 C D K L 2 1 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED B A G H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN I • SUITABLE FOR BROAD BAND APPLICATIONS SOT143 PACKAGE PIN 1 – DRAIN PIN 2 – SOURCE PIN 3 – GATE PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE 'LP $ % & ' ( ) * + , . / PP PLQ PD[ %6& %6& 5() PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. ,QFKHV PLQ PD[ %6& %6& 5() • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1W 40V ±20V 2A –65 to 125°C 150°C Document Number 3890 Issue 3 D2290UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Drain–Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 0.2A 0.18 S GPS Common Source Power Gain PO = 1W 10 dB η Drain Efficiency VDS = 12.5V 40 % 20:1 — BVDSS IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 50mA f = 1GHz Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = –5V f = 1MHz 40 V 12 pF f = 1MHz 10 pF f = 1MHz 1 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 175 °C / W Document Number 3890 Issue 3