SEME-LAB D2282UK

TetraFET
D2282UK
SEME
LAB
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 6V – 1GHz
SINGLE ENDED
0 .3 2
0 .2 4
0 .1 0
0 .0 2
16˚
m ax.
13˚
1 .7 0
m ax.
FEATURES
10˚
m ax.
• SIMPLIFIED AMPLIFIER DESIGN
6 .7
6 .3
3 .1
2 .9
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
4
3 .7 7 .3
3 .3 6 .7
1
2
3
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 8dB MINIMUM
• SURFACE MOUNT
1 .0 5
0 .8 5
0 .8 0
0 .6 0
2 .3 0
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
4 .6 0
SOT–223
PIN 1
GATE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
DRAIN
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
2W
40V
±20V
400mA
–65 to 125°C
150°C
Prelim. 7/96
D2282UK
SEME
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
IDSS
IGSS
Drain–Source Breakdown
VGS = 0
Voltage
ID = 10mA
Zero Gate Voltage
VDS = 12.5V
Drain Current
VGS = 0
Gate Leakage Current
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
ID = 0.2A
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
VDS = 10V
GPS
Common Source Power Gain
PO = 750mW
η
Drain Efficiency
VDS = 6V
VSWR
Load Mismatch Tolerance
f = 1GHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
* Pulse Test:
VDS = 0V
IDQ = 75mA
VGS = –5V
VGS = 0
f = 1MHz
VDS = 12.5V
Max. Unit
40
f = 1MHz
VDS = 12.5V
Typ.
VGS = 0
f = 1MHz
1
V
1
mA
1
µA
5
V
0.18
mhos
8
dB
40
%
10:1
—
12
10
pF
1
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Max. 70°C / W
Prelim. 7/96