TetraFET D2213UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL A C B (2 pls) K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • VERY LOW Crss PIN 3 DRAIN 2 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 PIN 4 • LOW NOISE DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 83W 40V ±20V 8A –65 to 150°C 200°C * Per Side Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/96 D2213UK SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 4 mA VGS = 20V VDS = 0 4 µA VGS(th) Gate Threshold Voltage * ID = 10mA VDS = VGS 0.5 7 V gfs VDS = 10V ID = 0.8A 0.72 S 10 dB 40 % 20:1 — IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * 40 V TOTAL DEVICE GPS Common Source Power Gain PO = 20W η Drain Efficiency VDS = 12.5V VSWR Load Mismatch Tolerance IDQ = 0.8A f = 1GHz PER SIDE Ciss Input Capacitance VDS = 0 Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 * Pulse Test: VGS = –5V f = 1MHz 48 pF f = 1MHz 40 pF f = 1MHz 4 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 2.1°C / W Prelim. 2/96