TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS DA PIN 1 SOURCE PIN 2 DRAIN • LOW Crss PIN 3 SOURCE PIN 4 GATE • SIMPLE BIAS CIRCUITS DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 50W 40V ±20V 8A –65 to 150°C 200°C Prelim. 9/95 D1210UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit VGS = 0 ID = 100mA VDS = 12.5V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 1A 0.8 S GPS Common Source Power Gain PO = 10W 10 dB η Drain Efficiency VDS = 12.5V 50 % VSWR Load Mismatch Tolerance f = 175MHz 20:1 — IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.4A Ciss Input Capacitance VDS = 0 Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: 40 VGS = –5V f = 1MHz V 60 pF f = 1MHz 40 pF f = 1MHz 4 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 3.5°C / W Prelim. 9/95