SHINDENGEN VR Series Power MOSFET 2SK1861 ( F04E15L ) N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 150V 4A RATINGS Absolute Maximum Ratings (Tc = 25) Item Symbol Tstg Storage Temperature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd. Conditions Ratings -55 to 150 150 150 ±20 4 12 4 10 Unit V A W VR Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tran]conductance RDS(ON) Static Drain-Source On-]tate Resistance Gate Threshold Voltage Source-Drain Diode Forward Voltage Thermal Resistance Total Gate Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Turn-Off Time VTH VSD Æjc Qg Ciss Crss Coss ton toff 2SK1861 ( F04E15L ) Conditions ID = 1mA, VGS = 0V VDS = 150V, VGS = 0V VGS = ±20V, VDS = 0V ID = 2A, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 10V ID = 1mA, VDS = 10V IS = 4A, VGS = 0V junction to case VGS = 10V, ID = 4A, VDD = 100V VDS = 10V, VGS = 0V, f = 1MHZ ID = 2A, RL = 50¶, VGS = 5V Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd. Min. 150 Typ. Max. 1.8 3.6 0.42 0.35 1.5 1.0 21 480 50 160 60 120 250 ±10 0.6 0.5 2.0 1.5 12.5 Unit V ÊA S ¶ V /L nC pF 120 240 ns