SONY SLD131UL

SLD131UL
GaAlAs Laser Diode
Description
The SLD131UL is a low-power consumption and
low-noise laser diode developed for portable CDs.
M-259
Features
• Low current consumption IOP: 20mA (PO = 2.5mW)
• Supports single power supply.
• Low noise
Applications
• Portable CDs
Structure
• GaAlAs double hetero laser diode
• PIN photodiode to monitor laser beam output
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
PO
4
mW
• Reverse voltage
VR LD
2
V
PD
15
V
• Operating temperature Topr
–10 to +60 °C
• Storage temperature
Tstg
–40 to +85 °C
Connection Diagram
3
Pin Configuration
COMMON
LD
PD
2
2
1
1
3
1. LD anode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94615-PK
SLD131UL
Electrical and Optical Characteristics (TC = 25°C)
Item
TC : Case temperature
Conditions
Symbol
Min.
Typ.
Max.
Unit
16
28
mA
20
30
mA
Threshold current
Ith
Operating current
Iop
Po = 2.5mW
Operating voltage
Vop
Po = 2.5mW
1.7
1.9
2.5
V
Wavelength
λp
Po = 2.5mW
760
790
810
nm
Monitor current
Im
Po = 2.5mW
VR = 5V
0.08
0.11
0.6
mA
20
39
45
degree
8
13
25
degree
25
%
±150
µm
±4
degree
0.9
mW/mA
Rediation
angle
Positional
accuracy
Perpendicular
θ⊥
Parallel
θ//
Asymmetry
∆SR∗
Position
∆X, ∆Y, ∆Z
Po = 2.5mW
∆φ⊥
Po = 2.5mW
Differential efficiency
ηD
Po = 2.5mW
Astigmatism
AS
| Z // –Z⊥ |
15
µm
Dark current of PD
ID
VR = 5V
150
nA
capacitance of PD
CT
VR = 5V, f = 1kHz
30
pF
Angle
0.2
Power
∗
∆SR =
SL SR
–7° 0°
θ//
7°
–2–
SL – SR
SL + SR
0.6
SLD131UL
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Far field pattern (FFP)
5.0
Tc = 10°C
Tc = 10°C
30°C
60°C
Po = 2.5mW, Tc = 25°C
40°C
50°C
60°C
20°C
4.0
Relative radiant intensity
PO – Optical power output [mV]
4.5
3.5
3.0
2.5
2.0
1.5
θ⊥
θ//
1.0
0.5
0.0
0
5
10
0
15
20
25
30
0.1
0.2
IF – Forward current [mA]
35 IF [mA]
–40
–30
–20
–10
0
10
0.3
30
40
Angle [ ° ]
Threshold current vs. Temperature characteristics
Differential efficiency vs. Temperature characteristics
100
1.0
Po = 2.5mW
ηD – Differential efficiency [mW/mA]
80
Ith – Threshold current [mA]
20
Imon [mA]
60
40
20
10
–20
0
20
40
60
0.8
0.6
0.4
0.2
0.0
–20
80
0
Tc – Case temperature [°C]
20
40
60
80
Tc – Case temperature [°C]
Monitor current vs. Temperature characteristics
PIN diode voltage and current characteristics
0.25
1.0
Po = 2.5mW, Tc = 25°C
Po = 2.5mW
Im – Monitor current [mA]
Current [mA]
0.8
0
–0.25
–1.0
0.0
0.6
0.4
0.2
0.1
–20
1.0
0
20
40
Tc – Case temperature [°C]
Voltage [V]
–3–
60
80
SLD131UL
Power dependence of far field pattern
(Perpendicular to junction)
Power dependence of far field pattern
(Parallel to junction)
Tc = 25°C
Relative radiant intensity
Relative radiant intensity
Tc = 25°C
Po = 4mW
Po = 4mW
Po = 2.5mW
Po = 2.5mW
Po = 1mW
Po = 1mW
–40
–30
–20
–10
0
10
20
30
0
–40
40
–30
–20
–10
10
0
20
30
40
Angle [ ° ]
Angle [ ° ]
Temperature dependence of far field pattern
(Parallel to junction)
Temperature dependence of far field pattern
(Perpendicular to junction)
Po = 2.5mW
Po = 2.5mW
Tc = 50°C
Relative radiant intensity
Relative radiant intensity
Tc = 60°C
Tc = 60°C
Tc = 50°C
Tc = 40°C
Tc = 40°C
Tc = 30°C
Tc = 30°C
Tc = 20°C
Tc = 20°C
Tc = 10°C
Tc = 10°C
–40
–30
–20
–10
0
10
20
30
40
–40
Angle [ ° ]
–30
–20
–10
0
Angle [ ° ]
–4–
10
20
30
40
SLD131UL
Power dependence of oscillating spectrum
Tc = 25°C
Relative radiant intensity
Po = 1mW
Po = 2.5mW
Po = 4mW
780
785
790
λ – Wavelength [nm]
–5–
795
800
SLD131UL
Temperature dependence of oscillating spectrum
PO = 2.5mW
Relative radiant intensity
Tc = 60°C
Tc = 40°C
Tc = 20°C
785
790
795
λ – Wavelength [nm]
–6–
800
805
SLD131UL
Unit: mm
M-259
Reference Slot
0.4
1.0
0.5
3
90°
Window Glass φ0.8
2
1
0
φ5.6 – 0.05
φ4.4 MAX
0.5 MIN
φ3.8 MAX
5
2
3
1
6.5
LD Chip & Photo Diode
30°
0.2
Reference Plane
1.2 ± 0.1 3.1 MAX
0.6
∗1.26
Package Outline
3 – φ0.45
∗Optical
Distance = 1.35 ± 0.15
SONY CODE
PCD φ2.0
M-259
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
–7–
0.3g