SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 180mW Applications • Solid state laser excitation • Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 200 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 mW V V °C °C Pin Configuration 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88060B81-PS SLD302V Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C) Item Symbol Min. Conditions Typ. Max. Unit 150 200 mA Threshold current Ith Operating current Iop PO = 180mW 350 500 mA Operating voltage Wavelength∗1 Vop PO = 180mW 1.9 3.0 V λp PO = 180mW 840 nm Monitor current Imon PO = 180mW VR = 10V Perpendicular Radiation angle (F. W. H. M.∗) Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ ηD Differential efficiency 770 mA 0.3 PO = 180mW 28 40 degree 12 17 degree ±50 µm ±3 degree PO = 180mW PO = 180mW 0.65 0.9 mW/mA ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type Wavelength (nm) SLD302V-1 785 ± 15 SLD302V-2 810 ± 10 SLD302V-3 830 ± 10 Type Wavelength (nm) SLD302V-21 798 ± 3 SLD302V-24 807 ± 3 SLD302V-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD302V Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 200 TC = 0°C TC = 25°C Po – Optical power output [mW] Po – Optical power output [mW] TC = –10°C TC = 0°C TC = 25°C 100 TC = 50°C 200 TC = 50°C 100 0 0 0 250 IF – Forward current [mA] TC = –10°C 0 0.1 Imon – Monitor current [mA] 0.2 500 Power dependence of far field pattern (parallel to junction) Threshold current vs. Temperature characteristics 1000 Radiation intensity (optional scale) 500 100 –10 0 10 20 30 Tc – Case temperature [°C] 40 PO = 180mW PO = 90mW PO = 30mW 50 –30 Power depecdence of near field pattern –20 –10 0 10 Angle [degree] 20 30 Oscillation wavelength vs. Temperature characteristics 830 PO = 180mW PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW λp – Oscillation wavelength [nm] TC = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] TC = 25°C 820 810 800 790 780 –10 50µm –3– 0 10 20 30 Tc – Case temperature [°C] 40 50 SLD302V Differential efficiency vs. Temperature characteristics Power dependence of polarization ratio 1.5 80 60 1.0 Polarization ratio ηD – Differential efficiency [mW/mA] Tc = 25°C 40 0.5 20 0 –10 0 10 20 30 40 0 50 Tc – Case temperature [°C] 0 50 100 150 200 Po – Optical power output [mW] –4– 250 SLD302V Power dependence of wavelength Relative radiant intensity Tc = 25°C Po = 80mW Relative radiant intensity Tc = 25°C Po = 40mW 800 805 810 800 Wavelength [nm] 805 810 Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 160mW Relative radiant intensity Tc = 25°C Po = 120mW 800 805 810 800 Wavelength [nm] Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 200mW 800 805 805 810 Wavelength [nm] –5– 810 SLD302V Temperature dependence of wavelength (Po = 180mW) Relative radiant intensity Tc = 12°C Relative radiant intensity Tc = –6°C 805 815 825 805 Wavelength [nm] 815 825 Wavelength [nm] Relative radiant intensity Tc = 35°C Relative radiant intensity Tc = 23°C 805 815 825 805 Wavelength [nm] Wavelength [nm] Relative radiant intensity Tc = 45°C 805 815 815 825 Wavelength [nm] –6– 825 SLD302V Unit: mm M-248 (LO-11) Reference Slot 0.4 1.0 3 2 1 Photo Diode 0 φ9.0 – 0.015 φ7.7 MAX Reference Plane LD Chip 3 – φ0.45 7.0 MAX φ3.5 1.5 3.4 MAX 0.6 MAX φ6.9 MAX Window Glass ∗2.45 Package Outline ∗Optical Distance = 2.55 ± 0.05 PCD φ2.54 SONY CODE M-248 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –7– 1.2g