SLD1324ZT High-Power Density 1W Laser Diode For the availability of this product, please contact the sales office. Description The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine tuning of wavelength is possible by controlling the laser chip temperature. M-272 Features • High power Recommended optical power output :1.0W • Emitting line width :200µm • Flat package with built-in photodiode, TE cooler and thermistor Equivalent Circuit T.E. Cooler Applications • Medical use • Solid state laser excitation TH Structure AlGaInP quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) • Optical power output PO • Reverse voltage VRLD PD • Operating temperature (Tth) Topr • Storage temperature Tstg • Operating current of TE cooler IT 1 2 3 1.1 2 15 –10 to +30 –40 to +85 4.0 LD 4 5 6 PD 7 8 9 10 11 12 W V V °C °C A Pin Configuration (Top View) No. Function No. Function 1 T. E. Cooler (negative) 7 LD (cathode) 2 T. E. Cooler (negative) 8 LD (cathode) 3 Thermister 9 PD (cathode) 4 Thermister 10 PD (anode) 5 LD (anode) 11 T. E. Cooler (positive) 6 LD (anode) 12 T. E. Cooler (positive) 1 12 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94724-PP SLD1324ZT Optical and Electrical Characteristics (Tth = Thermistor temperature, Tth = 25°C) Item Symbol Conditions Min. Typ. Max. Unit 0.9 1.5 A Threshold current Ith Operating current Iop PO = 1.0W 2.1 3.0 A Operating voltage Vop PO = 1.0W 2.2 3.0 V Wavelength λ PO = 1.0W 685 695 705 nm Monitor current Imon PO = 1.0W, VR = 10V 0.15 1.2 3.0 mA Perpendicular θ⊥ PO = 1.0W 15 24 35 degree Parallel θ// PO = 1.0W 4 11 15 degree Position ∆X, ∆Y PO = 1.0W ±100 µm Angle ∆φ⊥ PO = 1.0W ±3 degree Differential efficiency ηD PO = 1.0W 1.5 W/A Thermistor resistance Rth Tth = 25°C Radiation angle (F.W.H.M) Positional accuracy 0.3 0.9 10 kΩ Marking Production factory 4 1 1 Lot No. ∗ Categories are not specified by marking. Safety goggles for protection from laser beam Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device –2– SLD1324ZT Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Threshold current vs. Temperature characteristics 1.2 1.5 Tth = 3025 15 0 –10°C Ith-Threshold current [mA] Po-Optical power output [W] 1.0 Imon 0.8 IF –10 0.6 Tth = 30°C 0.4 1 0.2 0.5 –10 0 0 0.5 1.0 1.5 2.0 1.5 10 20 30 Tth-Thermistor temperature [°C] IF Forward current [A] 0 0.5 1.0 Imon-Monitor Current [mA] 0 2.0 Slope efficiency vs. Temperature characteristics Temperature dependence of wavelength 1 700 690 λp-Wavelength [nm] ηD Slope efficiency [W/A] PO = 1W 0.5 680 670 0 –10 0 10 20 660 –10 30 0 10 Tth-Thermistor temperature [°C] Power dependence of far field pattern (Perpendicular to junction) Power dependence of far field pattern (Parallel to junction) Tth = 25°C Relative radiant intensity Relative radiant intensity Tth = 25°C PO = 1.0W 0.8W 0.6W 0.4W 0.2W –60 30 20 Tth-Thermistor temperature [°C] –40 –20 0 20 Angle [degree] 40 PO = 1.0W 0.8W 0.6W 0.4W 0.2W –60 60 –3– –40 –20 0 20 Angle [degree] 40 60 SLD1324ZT TE cooler characteristics 2 15 15 40 30 ∆T VS V 10 IT = 4A 20 3A 2A ∆T 10 5 Q-Absorbed heat [W] Tth = 25°C VT-Pin voltage [V] Q-Absorbed heat [W] Tc = 32°C 80 100 0 3A 10 ∆T 0 3A 10 5 VS Q 4A 0 20 40 60 80 ∆T-Temperature difference [°C] ∆T: Tc – Tth Tth: Thermistor temperature Tc : Case temperature Thermistor characteristics 50 Rth-Thermistor resistance [kΩ] V 2A 4A 60 4A 20 Q 40 IT = 2A ∆T-Temperature difference [°C] 10 5 1 –10 0 ∆T VS 20 3A 2A 0 0 30 SV 10 20 30 40 50 60 70 Tth-Thermistor temperature [°C] –4– 100 0 VT-Pin voltage [V] 1 40 SLD1324ZT Power dependence of Spectrum (Tth = 25°C) Po = 0.2W Po = 0.4W 1.00 Relative radiant intensity Relative radiant intensity 1.00 0.00 688 0.00 688 698 Wavelength [nm] 698 Wavelength [nm] Po = 0.8W Po = 0.6W 1.00 Relative radiant intensity Relative radiant intensity 1.00 0.00 688 698 Wavelength [nm] 698 Wavelength [nm] Po = 1.0W Relative radiant intensity 1.00 0.00 688 0.00 688 698 Wavelength [nm] –5– SLD1324ZT Temperature dependence of Spectrum (Po = 1W) Tth = –10°C Tth = 0°C 1.00 Relative radiant intensity Relative radiant intensity 1.00 0.00 675 0.00 675 705 705 Wavelength [nm] Wavelength [nm] Tth = 25°C Tth = 15°C 1.00 Relative radiant intensity Relative radiant intensity 1.00 0.00 675 705 Wavelength [nm] 705 Wavelength [nm] Tth = 30°C Relative radiant intensity 1.00 0.00 675 0.00 675 705 Wavelength [nm] –6– SLD1324ZT Unit: mm M-272 + 0.06 4 – φ3.0 0 Window Glass 8.0 ± 0.5 φ5.0 36.0 ± 0.5 ∗10.0 ± 0.1 20.0 ± 0.05 18.0 41.0 ± 0.05 12 – φ0.64 2.54 46.0 ± 0.5 0.8 MAX 23.0 SONY CODE M-272 13.05 ± 0.1 9.0 ± 0.2 ∗20.5 ± 0.1 3.0 Reference Plane LD CHIP 36.0 ± 0.5 12.35 Package Outline ∗Distance between pilot hole and emitting area. EIAJ CODE JEDEC CODE PACKAGE WEIGHT –7– 118 g