SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. Features • Compact size • High power output • Hole for thermistor 3 × 3 × 5mm block Po = 1000mW Applications • Solid state laser excitation • Medical use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 15°C) • Optical power output • Recommended optical power output • Reverse voltage • Operating temperature • Storage temperature Po 1000 Po 900 VR LD 2 Topr –10 to +30 Tstg –40 to +85 mW mW V °C °C Pin Configuration No. Function 1 LD cathode 2 LD anode 1 LD cathode 2 LD anode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E89106A81-PS SLD304B Electrical and Optical Characteristics Item (Tc = 15°C) Symbol Conditions Min. Typ. Max. Unit 450 700 mA Threshold current Ith Operating current Iop PO = 900mW 1400 2000 mA Operating voltage Vop PO = 900mW 2.1 3.0 V Wavelength λp PO = 900mW 840 nm Radiation angle Perpendicular to junction (F. W. H. M.∗) Parallel to junction θ⊥ Positional accuracy Position Angle Differential efficiency 770 PO = 900mW θ// 28 40 13 17 ∆X ±300 ∆Y, ∆Z PO = 900mW ±100 ∆φ⊥ ηD ±3 PO = 900mW ∗ F. W. H. M. : Full Width at Half Maximum –2– 0.5 0.8 degree µm degree mW/mA SLD304B Example of Representative Characteristics Optical power output vs. Forward current Threshold current vs. Temperature characteristics 1000 1000 Tc = –10°C Ith – Threshold current [mA] PO – Optical power output [mW] Tc = 0°C Tc = 30°C Tc = 15°C Tc = 25°C 500 500 100 –10 0 10 20 30 Tc – Case temperature [°C] 0 0 500 1000 1500 2000 IF – Forward current [mA] Power dependence of far field pattern Power dependence of near field pattern Tc = 15°C Radiation intensity (optional scale) Tc = 15°C (Parallel to junction) Radiation intensity (optional scale) PO = 900mW PO = 500mW PO = 200mW PO = 50mW PO = 900mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW 200µm –30 –20 –10 0 10 20 30 Angle [degree] Oscillation wavelength vs. Temperature characteristics Differential efficiency vs. Temperature characteristics 830 ηD – Differential efficiency [mW/mA] λp – Oscillation wavelength [nm] PO = 900mW 820 810 800 790 780 –10 1.0 0.5 0 0 10 20 Tc – Case temperature [°C] 30 40 –10 0 10 20 Tc – Case temperature [°C] –3– 30 40 SLD304B Optical power output vs. Operating current Power dependence of polarization ratio 7 TC = 15°C Pulse width = 1µs Duty = 10% Tc = 15°C 300 Po – Optical power output [W] Polarization ratio 6 200 100 PULSE 5 4 3 2 CW 1 0 0 0 200 400 600 800 1000 1200 Pulse width dependence of COD∗ power 10 Duty = 10% TC = 15°C COD output [W] 1.0 0.5 0.1 0.1 0.5 1.0 5.0 10 1 2 3 4 5 Iop – Operating current [A] Po – Optical power output [mW] 5.0 0 50 100 Pulse width [µs] ∗ COD (Catastrophic Optical Damage) –4– 6 7 SLD304B Power Dependence of Wavelength 800 Reletive radiant intensity Tc = 15°C Po = 400mW Reletive radiant intensity Tc = 15°C Po = 200mW 805 810 800 Wavelength [nm] 805 Reletive radiant intensity Tc = 15°C Po = 800mW Reletive radiant intensity Tc = 15°C Po = 600mW 800 805 810 800 Wavelength [nm] Reletive radiant intensity 805 805 Wavelength [nm] Tc = 15°C Po = 1000mW 800 810 Wavelength [nm] 810 Wavelength [nm] –5– 810 SLD304B Temperature Dependence of Wavelength (PO = 90mW) 795 Reletive radiant intensity Tc = 0°C Reletive radiant intensity Tc = –5°C 805 815 795 Wavelength [nm] 805 Reletive radiant intensity Tc = 10°C Reletive radiant intensity Tc = 5°C 795 805 815 795 Wavelength [nm] 805 815 Wavelength [nm] Reletive radiant intensity Tc = 20°C Reletive radiant intensity Tc = 15°C 795 815 Wavelength [nm] 805 815 795 Wavelength [nm] 805 Wavelength [nm] –6– 815 SLD304B Package Outline Unit: mm M – 261 5.0 ± 0.1 3.0 ± 0.1 1.5 0.2 1.7 0.3 Ø1.5 for Thermistor LD Chip 1.0 Ceramic 1.5 Contact Plate (LD Cathode) 0.2 1.8 3.0 ± 0.1 Body (LD Anode) PACKAGE STRUCTURE SONY CODE M-261 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –7– 1g