CHA2294 35-40GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2294 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. V5 Vd2 Vd3,4 IN OUT The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2 Vg3.4 Vc Typical on wafer measurements :Gain & NF Main Features • • • • • • Frequency range : 35-40GHz 4.0dB Noise Figure. 22dB gain Gain control range: 15dB Low DC power consumption, 120mA @ 5V Chip size : 2.32 X 1.235 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) 35 36 37 38 Frequency (GHz) NF (dB) 39 40 Main Characteristics Tamb. = 25°C Parameter Fop Min Operating frequency range Typ 35 Max Unit 40 GHz G Small signal gain 22 dB NF Noise figure 4 dB Gain control range with Vc variation 15 dB Bias current 120 mA Gctrl Id ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22942183 -01-July-02 1/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 35-40GHz LNA VGA CHA2294 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd2=Vd,3,4= 5V Symbol Fop Parameter Min Operating frequency range G 35 Small signal gain (1) ∆G Typ Small signal gain flatness (1) Max Unit 40 GHz 22 dB ±1.0 dB Is Reverse isolation (1) 50 dB NF Noise figure with Vc=1.2V 4 dB Gctrl Gain control range versus Vc 15 dB P1dB Output power at 1dB compression with Vc=1.2V 11 dBm VSWRin VSWRout Vd Input VSWR (1) 2.0:1 Output VSWR (1) 1.5:1 DC voltage V5= Vd2=Vd3,4 Vc -1.5 5 [-0.7, 1.2] V V 1.3 Id1 Bias current (2) with Vc=1.2V 20 mA Id Bias current total (3) with Vc=1.2V 120 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjust to 20mA with Vg1 voltage. (3) With Id1=20mA, adjust Vg2,3,4 voltage for a total drain current around 120mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage +5.25 V Id Maximum drain bias current 200 mA Vg Gate bias voltage -2.5 to +0.4 V Vc Maximum Control bias voltage +1.5 V Vdg Maximum drain to gate voltage (Vd - Vg) +5.0 V Pin Maximum input power overdrive (2) +15 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22942183 -01-July-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 35-40GHz LNA VGA CHA2294 Typical on wafer Measurements Bias Conditions : V5=Vd2=Vd3,4= 5 Volt, Vg1 for Id1= 20mA, Vg2=Vg3,4 = -0.3V, Vc=1.2V 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) 35 36 37 38 Frequency (GHz) NF (dB) 39 40 Gain & Noise Figure versus frequency 25 20 15 10 5 0 S21 (dB) S11 (dB) S22 (dB) -5 -10 -15 -20 -25 30 32 34 36 Frequency (GHz) 38 40 Gain & Return Loss versus frequency Ref. : DSCHA22942183 -01-July-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 35-40GHz LNA VGA CHA2294 In jig Measurements Bias Conditions : V5=Vd2= Vd3,4= 5 Volt, Vg1= Vg2=Vg3,4 = -0.3V, Vc= 1.2V 28 27 26 Gain (dB) 25 24 23 22 21 20 36GHz 39GHz 19 37GHz 40GHz 38GHz 18 -2 0 2 4 6 8 Output Power (dBm) 10 12 14 Gain versus Output power 28 26 24 22 20 18 P-1dB (dBm) Linear Gain (dB) 16 14 12 10 36 37 38 Frequency (GHz) 39 40 Linear Gain & Output power @ 1dB compression versus frequency Ref. : DSCHA22942183 -01-July-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 35-40GHz LNA VGA CHA2294 Chip Assembly and Mechanical Data To Vd2,3,4 DC Drain supply To V5 DC Drain supply feed 120pF 120pF RF Out RF In 120pF 120pF To Vg1 DC Gate supply feed 120pF To Vc DC supply feed To Vg2,3,4 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22942183 -01-July-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHA2294 Ordering Information Chip form : CHA2294-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22942183 -01-July-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice