SILICON DIFFUSED POWER TRANSISTOR BU508AF GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TOP-3Fa PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz MIN - IC=4.5A,IB1=-IB2=1.2A,VCC=140V MAX 1500 600 8 15 60 1.5 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 1500 600 8 15 4 6 60 150 150 UNIT V V A A A A W MIN - MAX 1.0 2.0 UNIT mA mA ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES PARAMETER Collector cut-off current VCEOsust Collector-emitter sustaining voltage VCEsat VBEsat hFE VF fT Cc ts tf Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 4.5A; IB = 2.0A IC = 4.5A; IB = 2.0A IC = 1A; VCE = 5V Switching times(16KHz line deflecton circuit) IC = 0.1A; VCE = 10V VCB = 10V IC=4.5A,IB1=-IB2=1.2A,VCC=140V Turn-off storage time Turn-off fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 8 V 1.5 2.5 40 3 135 7.0 1.0 V V V MHz pF s s