SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FCX491A ISSUE 3 - OCTOBER 1995 FEATURES * 1 Amp continuous current COMPLEMENTARY TYPEPARTMARKING DETAILS - C FCX591A N2 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current IC 1 A Continuous Collector Current I CM 2 A Power Dissipation P TOT 1 W Operating and Storage Temperature Range T j:T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO 40 V I C=100µA V (BR)CEO 40 V I C=10mA* V (BR)EBO 5 V I E=100µA I CBO, 100 nA V CB=30V, I CES 100 nA V CE=30V Emitter Cut-Off Current I EBO 100 nA V EB=4V Emitter Saturation Voltages V CE(sat) 0.3 0.5 V V I C=500mA, I B=50mA* I C=1A, I B=100mA* Collector Cut-Off Currents V BE(sat) 1.1 V I C=1A, I B=100mA* Base-Emitter Turn-On Voltage V BE(on) 1.0 V I C =1A, V CE=5V* Static Forward Current Transfer h FE Transitional Frequency fT Collector-Base Breakdown Voltage C obo 300 300 200 35 I C=1mA, V CE=5V I C=500mA, V CE=5V* I C=1A, V CE=5V* I C=2A, V CE=5V* 900 150 MHz I C=50mA, V CE=10V f=100MHz 10 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical Characteristics graphs see FMMT491A datasheet 3 - 87 V CB=10V f=1MHz