DIODES FCX458

SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FCX458
ISSUE 3 – OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Ptot= 1 Watt
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
C
FCX558
N58
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
V CEO
400
V
Emitter-Base Voltage
V EBO
5
V
Continuous Collector Current
IC
225
mA
Peak Pulse Current
I CM
500
mA
Power Dissipation at T amb=25°C
P tot
1
W
Operating and Storage Temperature Range
T j :T stg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V (BR)CBO
400
MAX.
V
I C=100µA
V CEO(sus)
400
V
I C=10mA*
V (BR)EBO
5
V
I E=100µA
ICBO
100
nA
V CB=320V
I CES
100
nA
V CE =320V
Emitter Cut-Off Current
I EBO
100
nA
V EB=4V
Emitter Saturation Voltages
V CE(sat)
0.2
0.5
V
V
I C=20mA, I B=2mA*
I C=50mA, I B=6mA*
V BE(sat)
0.9
V
I C=50mA, I B=5mA*
Base-Emitter
Turn On Voltage
V BE(on)
0.9
V
I C =50mA, V CE=10V*
Static Forward Current
Transfer Ratio
h FE
Transition Frequency
fT
Collector-Base
Breakdown Voltage
C obo
Switching times
t on
t off
Collector Cut-Off Currents
100
100
15
I C=1mA, V CE=10V
I C=50mA, V CE=10V*
I C=100mA, V CE=10V**
300
50
5
135 Typical
2260 Typical
MHz
I C=10mA, V CE=20V
f=20MHz
pF
V CB=20V, f=1MHz
ns
ns
I C=50mA, V C=100V
I B1=5mA, I B2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
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Mouser Electronics
Authorized Distributor
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FCX458TA