NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR ZTX327 ISSUE 2 MARCH 94 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE 55 UNIT V Collector-Emitter Voltage VCEO VCER 30 55 V V Emitter-Base Voltage VEBO 3.5 V mA Continuous Collector Current IC 400 Power Dissipation Ptot 1.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 55 TYP. MAX. UNIT V IC=100µ A, IE=0 CONDITIONS. Collector-Emitter Sustaining Voltage V(BR)CEO(sus) 30 V IC=5mA, IB=0 V(BR)CER(sus) 55 Emitter-Base Breakdown Voltage V(BR)EBO 3.5 Collector-Emitter Cut-Off Current ICEO Collector-Emitter Saturation Voltage VCE(SAT) Static Forward Current Transfer hFE 15 Transitional Frequency fT 500 Output Capacitance Cobo R.F. power output POUT 350 Efficiency η 50 IC=5mA, RBE=10Ω V IE=100µ A,IC=0 20 µA VCB=45V 1.0 V IC=100mA, IB.=20mA IC=50mA, VCE=5V 800 MHz IC=25mA, VCE=15V f=100MHz pF VCE=15V, IC=25mA f=100MHz 440 mW 70 % VCC=12V, PIN=80mW f=400MHz 3.0 PAGE NO