PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT549 ISSUE 1 SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E REFER TO ZTX549 FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -35 V IC=-100µ A, IE=0 V(BR)CEO -30 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-30V VCB=-30V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.50 -0.50 -0.75 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.90 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.85 -1 V IC=-1A, VCE=-2V* Static Forward Current hFE Transfer Ratio 70 100 80 40 Transition Frequency fT 100 Output Frequency Cobo 200 160 130 80 IC=-50mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 300 25 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-36