MRF316 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 6L FLG FEATURES: C A E C E 2x ØN FU LL R • PG = 10 dB min. at 80 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System D E E E .725/18,42 F G M K MAXIMUM RATINGS H 20 A IC B B J I L D IM M IN IM U M inche s / m m inche s / m m A .150 / 3.43 M AX IM U M .160 / 4.06 VCBO 65 V B C .210 / 5.33 .220 / 5.59 VCEO 36 V D .835 / 21.21 .865 / 21.97 VEBO 4.0 V PDISS 270 W @ TC = 25 C E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 O .725 / 18.42 I O -65 C to +200 C .007 / 0.18 .125 / 3.18 H O TJ .045 / 1.14 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M O O TSTG -65 C to +150 C θJC 0.65 C/W O CHARACTERISTICS .135 / 3.43 ORDER CODE: ASI10771 O TC = 25 C NONETEST CONDITIONS SYMBOL .120 / 3.05 N MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 65 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 BVEBO IE = 10 mA 4.0 ICES VCE = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC Ψ VCE = 28 V IC = 5.0 A V 20 f = 1.0 MHz POUT = 80 W f = 175 MHz 10.0 55 13.0 60 15 mA 200 --- 250 pF dB % 30:1 minimum without degation in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1