VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability. PACKAGE STYLE .380 4L FLG B .112 x 45° A E C Ø.125 NOM. FULL R J FEATURES: .125 • 175 MHz 28 V Class C • Efficiency 60% min • POUT = 40 W @ 7.6 dB • Omnigold™ Metalization System B E C D E F I GH MAXIMUM RATINGS MAXIMUM 5.0 A DIM MINIMUM inches / mm inches / mm 65 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 VCE0 35 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 VEBO 4.0 V E F .004 / 0.10 .006 / 0.15 PDISS 60 W G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 IC VCBO -65 °C to +200 °C TJ -65 °C to +150 °C θJC 2.9 °C/W CHARACTERISTICS ORDER CODE: ASI10726 TC = 25 °C NONETEST CONDITIONS SYMBOL .280 / 7.11 I J TSTG .385 / 9.78 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVCBO IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA ICES VCE = 30 V 10 mA hFE VCE = 5.0 V 200 --- IC = 500 mA 5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB40-28F Cob VCB = 30 V PG VCE = 28 V ηC POUT = 40 W f = 1.0 MHz PIN = 7.0 W f = 175 MHz 65 7.6 pF dB 60 % IMPEDANCE DATA VCE = 28 V f = 175 MHz PIN (W) 2 4 6 8 POUT = (W) 28.5 43.0 53.0 60.5 ZIN (Ω) 0.85 + j1.20 1.05 + j1.32 1.01 + j1.42 1.05 + j1.35 ZCL = (Ω) 3.25 + j7.05 4.45 + j5.40 5.25 + j4.42 5.45 + j4.12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2