BILIN SMTPAXXX_03

BL
GALAXY ELECTRICAL
TELECOMMUNICATION PROTECTION
FEATURES
Bidirectional crowbar protection
SMTPAxxx
BREAKDOWN VOLTAGE: 62 --- 270 V
PEAK PULSE POWER: 5000 W
SMB
Voltage range from 62V to 270V
4.5± 0.15
Holding current: IH=150mA min
Repetitive peak pulse current:
3.5± 0.2
2.0± 0.15
Low capacitance from 15pF to 30pF [email protected]
Low leakage current: IR=2μA max
IPP=50A,10/1000μs.
5.3± 0.2
DESCRIPTION
2.3± 0.15
The SMTPAxxx series has been designed to protect
telecommunication equipment against lightning and
transient induced by AC power lines.The package/die
size ratio has been optimized by using the SMB package.
0.2± 0.05
0.203MAX
1.25± 0.2
SCHEMATIC DIAGRAM
Dimensions in millimeters
Peak surge
voltage
(V)
Voltage
waveform
( s)
Current
waveform
( s)
GR-1089 Core first level
2500
1000
2/10
10/1000
2/10
10/1000
500
100
12
10
GR-1089 Core second level
5000
2/10
2/10
500
24
GR-1089 Core Intra-building
1500
2/10
2/10
100
0
ITU-T-K20/K21
6000
1500
10/700
5/310
150
37.5
53
0
ITU-T-K20 (IEC61000-4-2)
6000
8000
1/60 ns
VDE0433
4000
2000
0
5/310
100
50
21.5
0
1.2/50
1/20
100
50
0
0
5/310
8/20
10/160
10/560
100
100
200
100
21.5
0
12.5
6.5
5/320
25
0
Complies with the
following standards:
VDE0878
4000
2000
4000
4000
FCCPart68,lightning surgetypeA
1500
800
10/700
1.2/50
10/160
10/560
FCCPart68,lightning surgetypeB
1000
9/720
IEC-1000-4-5
Required
Necessary
peak current resistor
(A)
( )
ESD contact discharge
ESD air discharge
0
0
www.galaxycn.com
Document Number 0286002
BLGALAXY ELECTRICAL
1.
BL
GALAXY ELECTRICAL
ABSOLUTE MAXIMUM RATINGS (TA=25
SMTPAxxx
)
Symbol
Parameter
Value
10/1000 s
8/20μs
10/560μs
5/310μs
10/160μs
1/20μs
2/10μs
8/20μs
t=20m s
t=16.6m s
t=0.2s
t=2s
t=16.6m s
t=20m s
Maxim um
Repetitive peak puls e current
Ipp
IFS
Fail safe m ode: m axim um current
Non repetitive s urge peak on-s tate current (Sinus oidal)
IFSM
I2t
Tstg
Tj
TL
I2t vallue for fusing
Storage tem perature range
junction tem perature
Storage tem perature range Maxim um junction tem perature
Unit
50
100
55
65
75
100
150
2.5
30
32
17
9
8.5
9
-55to+150
150
260
A
kA
A
A2s
THERMAL RESISTANCES
Symbol
R th(j-l)
R th(j-a)
Type
SMTPA62
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
Parameter
Junction to leads
Junction to am bient with recom m ended footprint
Device
Marking
Code
T62
T68
T100
T120
T130
T180
T200
T220
T240
T270
I R @ VR
IRM @ VRM
max.
max.
μA
V
2
56
61
90
108
117
162
180
198
216
243
mA
V
1.0
62
68
100
120
130
180
200
220
240
270
Value
20
100
DYNAMIC VBO
@ I BO
STATIC
V BO @ IBO
IH
max.
Note1
V
mA
max.
Note2
V
mA
min.
Note3
mA
85
93
135
160
173
235
262
285
300
350
82
90
133
160
173
240
267
293
320
360
800
800
150
150
150
150
150
150
150
150
150
150
Unlt
/W
/W
C
typ.
typ.
Note4 Note5
pF
pF
30
30
20
20
20
15
15
15
15
15
ELECTRICAL CHARACTERISTICS (T A =25
I
I PP
I BO
IH
IR
I RM
V
V RM
V BR V BO
Note2: See test circuit2.
Note4: V R=50V bias, V RMS =1V, F=1MHz.
Document Number 0286002
Symbol
V RM
IRM
VR
V BR
V BO
IH
IBO
IPP
C
C
50
45
40
40
35
30
30
30
30
30
)
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous reverse voltage
Breakdown voltage
Break over voltage
Holding current
Break over current
Peak pulse current
Capacitance
Note 1: See functional break over voltage test circuit 1.
Note3: See f unctional holding current test circuit 3.
Note5: V R=2V bias, V RMS =1V, F=1MHz.
www.galaxycn.com
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS:
100V/μs, di/dt<10A/μs, Ipp=50A
2Ω
U
45Ω
83Ω
66Ω47Ω
10μF
46μH
0.36nF
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
1kV/μs, di/dt<10A/μs, Ipp=10A
26μH
U
60μF
250Ω
47Ω
46μH
12Ω
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
TEST CIRCUIT 2 FOR IBO AND VBO PARAMETERS:
tp=20ms
R1
140
220V 50Hz
R2
240
k
Vout
I BO
measurement
D.U.T
V BO
measurement
1/4
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Sw itch K is closed
- For Unidirectional devices = Sw itch K is open.
V OUT Selection
- Device w ith V BO < 200 Volt
- V OUT = 250 V RMS, R1 = 140 Ω.
- Device w ith V BO 200 Volt
- V OUT = 480 V RMS, R2 = 240Ω.
www.galaxycn.com
Document Number 0286002
BLGALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
TEST CIRCUIT 3 FOR IH PARAMETERS:
R
D.U.T.
VBAT=-48V
Surge generator
This is a GO-NO GO Test w hich allow s to confirm the holding current (IH) level in a functional test circuit.
TESTPROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T w ith a surge current : Ipp = 10A , 10/1000 ms.
3) The D.U.T w ill come back off-state w ithin 50ms max.
PACKAGE MECHANICAL DATA
SMB(JEDEC DO-214AA)
DIMENSIONS
E1
D
REF.
A1
E
A2
C
L
b
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A1
1.9
2.45
0.075
0.096
A2
0.05
0.2
0.002
0.008
b
1.95
2.2
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.1
5.6
0.201
0.22
E1
4.05
4.6
0.159
0.181
D
3.3
3.95
0.13
0.156
L
0.75
1.6
0.03
0.063
2.3(0.09)
FOOT PRINT in millimeters (inches)
1.52(0.059)
2.75(0.108)
1.52(0.059)
www.galaxycn.com
Document Number 0286002
BLGALAXY ELECTRICAL
4.
RATINGS AND CHARACTERISTIC CURVES
SMTPAxxx
ORDER CODE
SM TPA
xx
SURFACE MOUNT
VOLTAGE
TRISILTM PROTECTION:
Ipp=50A
ORDERING INFORMATION
part number
marking
SMTPA62
U01
SMTPA68
U05
SMTPA100
U13
SMTPA120
U17
SMTPA130
U19
SMTPA180
U25
SMTPA200
U27
SMTPA220
U31
SMTPA240
U35
SMTPA270
U39
package
SMB
FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE
CURRENT VERSUS OVERLOAD DURATION
ITSM(A)
weight
base QTY
0.11g
tape & reel
5000
FIG.2 -- ON-STATE VOLTAGE VERSUS ON-STATE
CURRENT (TYPICAL VALUES).
50
40
delivery mode
IT(A)
F=50Hz
35
20
30
25
10
20
5
15
10
0
1E-2
VT(V)
2
5
t(s)
1
1E-1
1E+0
1E+1
1E+2
1E+3
1
2
3
4
5
6
7
8
9
10
www.galaxycn.com
Document Number 0286002
BLGALAXY ELECTRICAL
5.
RATINGS AND CHARACTERISTIC CURVES
FIG.3 -- RELATIVE VARIATION OF HOLDING CURRENT
VERSUS JUNCTION TEMPERATURE
SMTPAxxx
FIG.4 -- RELATIVE VARIATION OF BREAKOVER
VOLTAGE VERSUS JUNCTION TEMPERATURE
2.0
1.8
1 .0 8
1.6
1 .0 6
1.4
1 .0 4
1.2
1.0
1 .0 2
0.8
1
0.6
.9 8
0.4
TJ(°C)
0.2
0.0
-40
-20
0
20
TJ(
.9 6
40
60
80
100
)
.9 4
120
-4 0
FFFFFIG.5 -- RELATIVE VARIATION OF LEAKAGE CURRENT
VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES).
-2 0
0
20
40
60
80
100
120
FIG.6 -- RELATIVE VARIATION OF THERMAL
IMPEDANCE VERSUS PULSE DURATION
I RM[T J]/IRM [TJ=25 ]
2000
1000
VR=VRM
1E+2
TJ( )
Z TH(J-A)(
/W)
1E+1
100
1E+0
10
1
25
tp(s)
50
75
100
1E-1
1E-3
125
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
FIG.7 -- RELATIVE VARIATION OF JUNCTION CAPACITANCE VERSUS
REVERSE VOLTAGE APPLIED (TYPICAL VALUES)
C[V R ]/C[V R =50V]
2.5
2
F=1MH Z
1.5
1
.5
0
V R (V)
1
2
5
10
20
50
100
300
www.galaxycn.com
Document Number 0286002
BLGALAXY ELECTRICAL
6.