BL GALAXY ELECTRICAL TELECOMMUNICATION PROTECTION FEATURES Bidirectional crowbar protection SMTPAxxx BREAKDOWN VOLTAGE: 62 --- 270 V PEAK PULSE POWER: 5000 W SMB Voltage range from 62V to 270V 4.5± 0.15 Holding current: IH=150mA min Repetitive peak pulse current: 3.5± 0.2 2.0± 0.15 Low capacitance from 15pF to 30pF typ.@50V Low leakage current: IR=2μA max IPP=50A,10/1000μs. 5.3± 0.2 DESCRIPTION 2.3± 0.15 The SMTPAxxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines.The package/die size ratio has been optimized by using the SMB package. 0.2± 0.05 0.203MAX 1.25± 0.2 SCHEMATIC DIAGRAM Dimensions in millimeters Peak surge voltage (V) Voltage waveform ( s) Current waveform ( s) GR-1089 Core first level 2500 1000 2/10 10/1000 2/10 10/1000 500 100 12 10 GR-1089 Core second level 5000 2/10 2/10 500 24 GR-1089 Core Intra-building 1500 2/10 2/10 100 0 ITU-T-K20/K21 6000 1500 10/700 5/310 150 37.5 53 0 ITU-T-K20 (IEC61000-4-2) 6000 8000 1/60 ns VDE0433 4000 2000 0 5/310 100 50 21.5 0 1.2/50 1/20 100 50 0 0 5/310 8/20 10/160 10/560 100 100 200 100 21.5 0 12.5 6.5 5/320 25 0 Complies with the following standards: VDE0878 4000 2000 4000 4000 FCCPart68,lightning surgetypeA 1500 800 10/700 1.2/50 10/160 10/560 FCCPart68,lightning surgetypeB 1000 9/720 IEC-1000-4-5 Required Necessary peak current resistor (A) ( ) ESD contact discharge ESD air discharge 0 0 www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 1. BL GALAXY ELECTRICAL ABSOLUTE MAXIMUM RATINGS (TA=25 SMTPAxxx ) Symbol Parameter Value 10/1000 s 8/20μs 10/560μs 5/310μs 10/160μs 1/20μs 2/10μs 8/20μs t=20m s t=16.6m s t=0.2s t=2s t=16.6m s t=20m s Maxim um Repetitive peak puls e current Ipp IFS Fail safe m ode: m axim um current Non repetitive s urge peak on-s tate current (Sinus oidal) IFSM I2t Tstg Tj TL I2t vallue for fusing Storage tem perature range junction tem perature Storage tem perature range Maxim um junction tem perature Unit 50 100 55 65 75 100 150 2.5 30 32 17 9 8.5 9 -55to+150 150 260 A kA A A2s THERMAL RESISTANCES Symbol R th(j-l) R th(j-a) Type SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 Parameter Junction to leads Junction to am bient with recom m ended footprint Device Marking Code T62 T68 T100 T120 T130 T180 T200 T220 T240 T270 I R @ VR IRM @ VRM max. max. μA V 2 56 61 90 108 117 162 180 198 216 243 mA V 1.0 62 68 100 120 130 180 200 220 240 270 Value 20 100 DYNAMIC VBO @ I BO STATIC V BO @ IBO IH max. Note1 V mA max. Note2 V mA min. Note3 mA 85 93 135 160 173 235 262 285 300 350 82 90 133 160 173 240 267 293 320 360 800 800 150 150 150 150 150 150 150 150 150 150 Unlt /W /W C typ. typ. Note4 Note5 pF pF 30 30 20 20 20 15 15 15 15 15 ELECTRICAL CHARACTERISTICS (T A =25 I I PP I BO IH IR I RM V V RM V BR V BO Note2: See test circuit2. Note4: V R=50V bias, V RMS =1V, F=1MHz. Document Number 0286002 Symbol V RM IRM VR V BR V BO IH IBO IPP C C 50 45 40 40 35 30 30 30 30 30 ) Parameter Stand-off voltage Leakage current at stand-off voltage Continuous reverse voltage Breakdown voltage Break over voltage Holding current Break over current Peak pulse current Capacitance Note 1: See functional break over voltage test circuit 1. Note3: See f unctional holding current test circuit 3. Note5: V R=2V bias, V RMS =1V, F=1MHz. www.galaxycn.com BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES SMTPAxxx TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS: 100V/μs, di/dt<10A/μs, Ipp=50A 2Ω U 45Ω 83Ω 66Ω47Ω 10μF 46μH 0.36nF KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE 1kV/μs, di/dt<10A/μs, Ipp=10A 26μH U 60μF 250Ω 47Ω 46μH 12Ω KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE TEST CIRCUIT 2 FOR IBO AND VBO PARAMETERS: tp=20ms R1 140 220V 50Hz R2 240 k Vout I BO measurement D.U.T V BO measurement 1/4 TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Sw itch K is closed - For Unidirectional devices = Sw itch K is open. V OUT Selection - Device w ith V BO < 200 Volt - V OUT = 250 V RMS, R1 = 140 Ω. - Device w ith V BO 200 Volt - V OUT = 480 V RMS, R2 = 240Ω. www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 3. RATINGS AND CHARACTERISTIC CURVES SMTPAxxx TEST CIRCUIT 3 FOR IH PARAMETERS: R D.U.T. VBAT=-48V Surge generator This is a GO-NO GO Test w hich allow s to confirm the holding current (IH) level in a functional test circuit. TESTPROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T w ith a surge current : Ipp = 10A , 10/1000 ms. 3) The D.U.T w ill come back off-state w ithin 50ms max. PACKAGE MECHANICAL DATA SMB(JEDEC DO-214AA) DIMENSIONS E1 D REF. A1 E A2 C L b MILLIMETERS INCHES MIN. MAX. MIN. MAX. A1 1.9 2.45 0.075 0.096 A2 0.05 0.2 0.002 0.008 b 1.95 2.2 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.1 5.6 0.201 0.22 E1 4.05 4.6 0.159 0.181 D 3.3 3.95 0.13 0.156 L 0.75 1.6 0.03 0.063 2.3(0.09) FOOT PRINT in millimeters (inches) 1.52(0.059) 2.75(0.108) 1.52(0.059) www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 4. RATINGS AND CHARACTERISTIC CURVES SMTPAxxx ORDER CODE SM TPA xx SURFACE MOUNT VOLTAGE TRISILTM PROTECTION: Ipp=50A ORDERING INFORMATION part number marking SMTPA62 U01 SMTPA68 U05 SMTPA100 U13 SMTPA120 U17 SMTPA130 U19 SMTPA180 U25 SMTPA200 U27 SMTPA220 U31 SMTPA240 U35 SMTPA270 U39 package SMB FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS OVERLOAD DURATION ITSM(A) weight base QTY 0.11g tape & reel 5000 FIG.2 -- ON-STATE VOLTAGE VERSUS ON-STATE CURRENT (TYPICAL VALUES). 50 40 delivery mode IT(A) F=50Hz 35 20 30 25 10 20 5 15 10 0 1E-2 VT(V) 2 5 t(s) 1 1E-1 1E+0 1E+1 1E+2 1E+3 1 2 3 4 5 6 7 8 9 10 www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 5. RATINGS AND CHARACTERISTIC CURVES FIG.3 -- RELATIVE VARIATION OF HOLDING CURRENT VERSUS JUNCTION TEMPERATURE SMTPAxxx FIG.4 -- RELATIVE VARIATION OF BREAKOVER VOLTAGE VERSUS JUNCTION TEMPERATURE 2.0 1.8 1 .0 8 1.6 1 .0 6 1.4 1 .0 4 1.2 1.0 1 .0 2 0.8 1 0.6 .9 8 0.4 TJ(°C) 0.2 0.0 -40 -20 0 20 TJ( .9 6 40 60 80 100 ) .9 4 120 -4 0 FFFFFIG.5 -- RELATIVE VARIATION OF LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES). -2 0 0 20 40 60 80 100 120 FIG.6 -- RELATIVE VARIATION OF THERMAL IMPEDANCE VERSUS PULSE DURATION I RM[T J]/IRM [TJ=25 ] 2000 1000 VR=VRM 1E+2 TJ( ) Z TH(J-A)( /W) 1E+1 100 1E+0 10 1 25 tp(s) 50 75 100 1E-1 1E-3 125 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 FIG.7 -- RELATIVE VARIATION OF JUNCTION CAPACITANCE VERSUS REVERSE VOLTAGE APPLIED (TYPICAL VALUES) C[V R ]/C[V R =50V] 2.5 2 F=1MH Z 1.5 1 .5 0 V R (V) 1 2 5 10 20 50 100 300 www.galaxycn.com Document Number 0286002 BLGALAXY ELECTRICAL 6.