ESTEK 2N60

2N60
N2 Amps,600Volts
N-Channel MOSFET
■ Description
The ET2N60 N-Ceannel enhancement mode silicon gate
power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = [email protected] = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Ratings
Symbol
TO-220
TO-220F
Units
TO-251
TO-252
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Currenet
Continuous
Drain Current Pulsed
Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
Tc=25℃
ID
Tc=100℃
(Note 1)
IDP
*
2.0
2.0
1.35
1.35
8
8
*
*
1.9
A
1.14
A
7.6
A
Repetitive (Note 1)
EAR
5.55
4.4
mJ
Single Pulse (Note
EAS
130
120
mJ
(Note 3)
Tc=25℃
dv/dt
PD
1
4.5
55.5
23.6
V/ns
44
W
BEIJING ESTEK ELECTRONICS CO.,LTD
2N60
Derate above 25℃
*
0.44
0.19
0.35
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Drain current limited by maximum junction temperature.
■ Thermal Characteristics
Parameter
Ratings
Symbol
TO-220
TO-220F
Units
TO-251
TO-252
*
50 (110)
Thermal Resistance Junction-Ambient
RthJA
62.5
Thermal Resistance, Case-to-Sink Typ.
RthCS
0.5
--
--
Thermal Resistance Junction-Case
RthJC
2.32
5.5
2.87
℃/W
■ Electrical Characteristics(TJ=25℃,unless Otherwise specified.)
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250µA
Zero Gate Voltage Drain Current
IDSS
Min
Typ
Max
Units
600
--
--
V
Off Characteristics
--
--
1
µA
--
--
10
µA
VGS=30V,VDS=0V
--
--
100
nA
VGS=-30V,VDS=0V
--
--
-100
nA
△BVDSS/△TJ
ID=250µA
--
0.7
--
V/℃
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
--
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VDS=10V,
ID=1.0A(TO220,TO220F)
ID=0.95A(TO251,TO252)
--
4.1
5.0
Ω
--
200
--
pF
--
20
--
pF
--
4
--
pF
--
10
--
ns
--
25
--
ns
Gate-Body Leakage
Current
Forward
VDS=600V,VGS=0V
VDS=480V,TC=125℃
Reverse
Breakdown Voltage Temperature
Coefficient
IGSS
On Characteristics
Dynamic Characteristics
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V,
f=1MHZ
Switching Characteristics
Turn-On Delay Time
tD(ON)
Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
VDD=300V,ID=2.0A,
RG=25Ω
--
25
--
ns
--
30
--
ns
--
9
--
nC
--
1.5
--
nC
--
4.0
--
nC
VGS=0V,
ISD=2.0A(TO220,TO220F)
ISD=0.95A(TO251,TO252)
--
--
1.4
V
TO-220,TO-220F
--
--
2.0
TO-251, TO-252
--
--
1.9
TO-220,TO-220F
--
--
8.0
TO-251, TO-252
--
--
7.6
--
230
--
ns
--
1.0
--
µC
(Note 4, 5)
QG
VDS=480V, ID=2.0A
VGS=10V
QGS
(Note 4, 5)
Gate-Drain Charge
QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
tRR
Reverse Recovery Charge
Q RR
ISD=2.0A,
dISD/dt=100A/µs
(Note 4)
A
A
1. Repetitive Rating : Pulse width limited by maxim um junction temperature
2. L = 60 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
2
BEIJING ESTEK ELECTRONICS CO.,LTD
2N60
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
■ Typical Characteristics
3
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2N60
■ Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
TO220,TO220F
TO251,TO252
Figure 9-3. Maximum Safe Operating Area
for TO251, TO252
4
Figure 10. Maximum Drain Current
vs Case Temperature
BEIJING ESTEK ELECTRONICS CO.,LTD
2N60
■ Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Figure 11-3. Transient Thermal Response Curve for TO251/ TO252
5
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