2N60 N2 Amps，600Volts N-Channel MOSFET ■ Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 5.00Ω@VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Ratings Symbol TO-220 TO-220F Units TO-251 TO-252 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Tc=25℃ ID Tc=100℃ (Note 1) IDP ＊ 2.0 2.0 1.35 1.35 8 8 ＊ ＊ 1.9 A 1.14 A 7.6 A Repetitive (Note 1) EAR 5.55 4.4 mJ Single Pulse (Note EAS 130 120 mJ (Note 3) Tc=25℃ dv/dt PD 1 4.5 55.5 23.6 V/ns 44 W BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 Derate above 25℃ ＊ 0.44 0.19 0.35 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 ℃ Drain current limited by maximum junction temperature. ■ Thermal Characteristics Parameter Ratings Symbol TO-220 TO-220F Units TO-251 TO-252 ＊ 50 （110） Thermal Resistance Junction-Ambient RthJA 62.5 Thermal Resistance, Case-to-Sink Typ. RthCS 0.5 -- -- Thermal Resistance Junction-Case RthJC 2.32 5.5 2.87 ℃/W ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Symbol Test Conditions Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250µA Zero Gate Voltage Drain Current IDSS Min Typ Max Units 600 -- -- V Off Characteristics -- -- 1 µA -- -- 10 µA VGS=30V,VDS=0V -- -- 100 nA VGS=-30V,VDS=0V -- -- -100 nA △BVDSS/△TJ ID=250µA -- 0.7 -- V/℃ Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 -- 4.0 V Static Drain-Source On-Resistance RDS(ON) VDS=10V, ID=1.0A(TO220,TO220F) ID=0.95A(TO251,TO252) -- 4.1 5.0 Ω -- 200 -- pF -- 20 -- pF -- 4 -- pF -- 10 -- ns -- 25 -- ns Gate-Body Leakage Current Forward VDS=600V,VGS=0V VDS=480V,TC=125℃ Reverse Breakdown Voltage Temperature Coefficient IGSS On Characteristics Dynamic Characteristics Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS=25V,VGS=0V, f=1MHZ Switching Characteristics Turn-On Delay Time tD(ON) Rise Time tR Turn-Off Delay Time tD(OFF) Fall Time tF Total Gate Charge Gate-Source Charge VDD=300V,ID=2.0A, RG=25Ω -- 25 -- ns -- 30 -- ns -- 9 -- nC -- 1.5 -- nC -- 4.0 -- nC VGS=0V, ISD=2.0A(TO220,TO220F) ISD=0.95A(TO251,TO252) -- -- 1.4 V TO-220,TO-220F -- -- 2.0 TO-251, TO-252 -- -- 1.9 TO-220,TO-220F -- -- 8.0 TO-251, TO-252 -- -- 7.6 -- 230 -- ns -- 1.0 -- µC (Note 4, 5) QG VDS=480V, ID=2.0A VGS=10V QGS (Note 4, 5) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR Reverse Recovery Charge Q RR ISD=2.0A, dISD/dt=100A/µs (Note 4) A A 1. Repetitive Rating : Pulse width limited by maxim um junction temperature 2. L = 60 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 2 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature ■ Typical Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 ■ Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F TO220,TO220F TO251,TO252 Figure 9-3. Maximum Safe Operating Area for TO251, TO252 4 Figure 10. Maximum Drain Current vs Case Temperature BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 ■ Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve TO220 Figure 11-2. Transient Thermal Response Curve for TO220F Figure 11-3. Transient Thermal Response Curve for TO251/ TO252 5 BEIJING ESTEK ELECTRONICS CO.,LTD