ESTEK ET740

ET740
10.5 Amps,
,400Volts
N-Channel MOSFET
■ Description
The ET740 N-Channel enhancement mode silicon gate
power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) = [email protected] = 10 V
Low gate charge ( typical 30nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Ratings
Symbol
TO-220
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Currenet Continuous
ID
Tc=100℃
Drain Current Pulsed
Avalanche Energy
V
±30
10.5
V
10.5
*
*
6.6
6.6
IDP
(Note 1)
EAR
13.9
Single Pulse
(Note 2)
EAS
378
mJ
(Note 3)
dv/dt
4.5
V/ns
Tc=25℃
PD
Derate above 25℃
42
A
(Note 1)
Total Power Dissipation
42
*
A
Repetitive
Peak Diode Recovery dv/dt
*
400
VGSS
Tc=25℃
Units
TO-220F
A
mJ
139
45.5
W
1.11
0.36
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Drain current limited by maximum junction temperature.
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BEIJING ESTEK ELECTRONICS CO.,LTD
ET740
■ Thermal Characteristics
Parameter
Ratings
Symbol
TO-220
Units
TO-220F
Thermal Resistance Junction-Ambient
RthJA
62.5
Thermal Resistance, Case-to-Sink Typ.
RthCS
0.5
--
Thermal Resistance Junction-Case
RthJC
0.90
2.75
℃/W
■ Electrical Characteristics(TJ=25℃,unless Otherwise specified.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
BVDSS
IDSS
VGS=0V,ID=250µA
400
--
--
V
VDS=400V,VGS=0V
--
--
1
µA
VDS=320V,TC=125℃
--
--
10
µA
VGS=30V,VDS=0V
--
--
100
nA
VGS=-30V,VDS=0V
--
--
-100
nA
△BVDSS/△TJ
ID=250µA
--
0.6
--
V/℃
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
--
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VDS=10V,ID=5.25A
--
0.43
0.53
Ω
--
870
--
pF
--
250
--
pF
--
85
--
pF
--
15
--
ns
--
90
--
ns
Reverse
Current
Breakdown Voltage Temperature
Coefficient
IGSS
On Characteristics
Dynamic Characteristics
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V,
f=1MHZ
Switching Characteristics
Turn-On Delay Time
tD(ON)
VDD=200V,ID=10.5A,
RG=25Ω
Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
QG
QGS
(Note 4, 5)
VDS=320V, ID=10.5A
VGS=10V
--
80
--
ns
--
80
--
ns
--
30
--
nC
--
4.0
--
nC
--
15
--
nC
--
--
1.5
V
--
--
10.5
A
--
--
42.0
A
--
300
--
ns
--
2.5
--
µC
(Note 4, 5)
Gate-Drain Charge
QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
VGS=0V,ISD=10.5A
ISD=10.5A,
dISD/dt=100A/µs
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
(Note 4)
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22 mH, IAS = 5.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
2
BEIJING ESTEK ELECTRONICS CO.,LTD
ET740
■ Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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BEIJING ESTEK ELECTRONICS CO.,LTD
ET740
■ Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
Figure 10. Maximum Drain Current
vs Case Temperature
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BEIJING ESTEK ELECTRONICS CO.,LTD
ET740
■ Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
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BEIJING ESTEK ELECTRONICS CO.,LTD