ET740 10.5 Amps， ，400Volts N-Channel MOSFET ■ Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 0.53Ω@VGS = 10 V Low gate charge ( typical 30nC) Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Ratings Symbol TO-220 Drain-Source Voltage VDSS Gate-Source Voltage Drain Currenet Continuous ID Tc=100℃ Drain Current Pulsed Avalanche Energy V ±30 10.5 V 10.5 ＊ ＊ 6.6 6.6 IDP (Note 1) EAR 13.9 Single Pulse (Note 2) EAS 378 mJ (Note 3) dv/dt 4.5 V/ns Tc=25℃ PD Derate above 25℃ 42 A (Note 1) Total Power Dissipation 42 ＊ A Repetitive Peak Diode Recovery dv/dt ＊ 400 VGSS Tc=25℃ Units TO-220F A mJ 139 45.5 W 1.11 0.36 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 ℃ Drain current limited by maximum junction temperature. 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET740 ■ Thermal Characteristics Parameter Ratings Symbol TO-220 Units TO-220F Thermal Resistance Junction-Ambient RthJA 62.5 Thermal Resistance, Case-to-Sink Typ. RthCS 0.5 -- Thermal Resistance Junction-Case RthJC 0.90 2.75 ℃/W ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward BVDSS IDSS VGS=0V,ID=250µA 400 -- -- V VDS=400V,VGS=0V -- -- 1 µA VDS=320V,TC=125℃ -- -- 10 µA VGS=30V,VDS=0V -- -- 100 nA VGS=-30V,VDS=0V -- -- -100 nA △BVDSS/△TJ ID=250µA -- 0.6 -- V/℃ Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 -- 4.0 V Static Drain-Source On-Resistance RDS(ON) VDS=10V,ID=5.25A -- 0.43 0.53 Ω -- 870 -- pF -- 250 -- pF -- 85 -- pF -- 15 -- ns -- 90 -- ns Reverse Current Breakdown Voltage Temperature Coefficient IGSS On Characteristics Dynamic Characteristics Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS=25V,VGS=0V, f=1MHZ Switching Characteristics Turn-On Delay Time tD(ON) VDD=200V,ID=10.5A, RG=25Ω Rise Time tR Turn-Off Delay Time tD(OFF) Fall Time tF Total Gate Charge Gate-Source Charge QG QGS (Note 4, 5) VDS=320V, ID=10.5A VGS=10V -- 80 -- ns -- 80 -- ns -- 30 -- nC -- 4.0 -- nC -- 15 -- nC -- -- 1.5 V -- -- 10.5 A -- -- 42.0 A -- 300 -- ns -- 2.5 -- µC (Note 4, 5) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS=0V,ISD=10.5A ISD=10.5A, dISD/dt=100A/µs Reverse Recovery Time tRR Reverse Recovery Charge QRR (Note 4) 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22 mH, IAS = 5.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature 2 BEIJING ESTEK ELECTRONICS CO.,LTD ET740 ■ Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET740 ■ Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F Figure 10. Maximum Drain Current vs Case Temperature 4 BEIJING ESTEK ELECTRONICS CO.,LTD ET740 ■ Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for TO220 Figure 11-2. Transient Thermal Response Curve for TO220F 5 BEIJING ESTEK ELECTRONICS CO.,LTD