isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1404 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1404 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -30mA -3.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -10 μA hFE DC Current Gain IC= -1.5A; VCE= -3V isc Website：www.iscsemi.cn CONDITIONS MIN B B B B 2 1000 TYP. MAX 20000 UNIT