isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -45~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 70 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.0 V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 1 μA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 60 hFE-2 DC Current Gain IC= 0.1A ; VCE= 4V 35 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V fT CONDITIONS C D 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B hFE-1 Classifications B MIN 2 MAX UNIT 320 7 MHz