isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD673 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High Power Dissipation: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB653 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD673 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 3.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 hFE-2 DC Current Gain IC= 5A; VCE= 5V 20 hFE-1 Classifications B C 60-120 100-200 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT 100 V 5 V B 200