ISC 2SB1625

Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1625
・
DESCRIPTION
・With TO-3PML package
・Complement to type 2SD2494
APPLICATIONS
・Audio ,regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-110
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-6
A
IB
Base current
-1
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
1
Inchange Semiconductor
Product Specification
2SB1625
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5 A;IB=-5m A
-2.5
V
VBEsat
Base-emitter saturation voltage
IC=-5 A;IB=-5m A
-3.0
V
ICBO
Collector cut-off current
VCB=-110V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE
DC current gain
IC=-5A ; VCE=-4V
fT
Transition frequency
IC=0.5A ; VCE=-12V
100
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
110
pF
1.1
μs
3.2
μs
1.1
μs
-110
UNIT
V
5000
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=6Ω
IB1=-IB2=-5mA
VCC=-30V
hFE classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1625