SAVANTIC 2SD2560

SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB1647
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
1
A
PC
Collector power dissipation
130
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2560
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A ;IB=10mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=10mA
3.0
V
ICBO
Collector cut-off current
VCB=150V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE
DC current gain
IC=10A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
120
pF
fT
Transition frequency
IC=2A ; VCE=12V
70
MHz
0.8
µs
4.0
µs
1.2
µs
150
UNIT
V
5000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;RL=4B
IB1=-IB2=10mA
VCC=40V
hFE Classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD2560