ISC KSD2058

Inchange Semiconductor
Product Specification
KSD2058
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type KSB1366
APPLICATIONS
・With general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
3
A
0.5
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25℃
1.5
W
TC=25℃
25
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
KSD2058
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=5V
3.0
MHz
Collector output capacitance
f=1MHz;VCB=10V
35
pF
0.65
μs
1.3
μs
0.65
μs
fT
COB
CONDITIONS
MIN
TYP.
MAX
60
UNIT
V
1.5
3.0
60
V
V
300
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A IB1=-IB2=0.2A
VCC=30V ,RL=15Ω
hFE Classifications
O
Y
G
60-120
100-200
150-300
2
Inchange Semiconductor
Product Specification
KSD2058
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3