ISC 2SB816

Inchange Semiconductor
Product Specification
2SB816
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SD1046
・Wide area of safe operation
APPLICATIONS
・For LF Power Amplifier, 50W Output
Large Power Switching Applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-8
A
ICP
Collector current-peak
-12
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-40~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB816
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=∞
-120
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ;IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
VBE
Base-emitter on voltage
ICBO
VCEsat
CONDITIONS
MIN
TYP.
UNIT
-2.0
V
IC=-1A;VCE=-5V
-1.5
V
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
15
MHz
Collector output capacitance
f=1MHz;VCB=-10V
220
pF
0.22
μs
0.93
μs
0.37
μs
fT
COB
-1.0
MAX
200
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-1.0A ;IB1=-IB2=-0.1A
VCC=20V;RL=20Ω
Fall time
hFE-1 Classifications
D
E
60-120
100-200
2
Inchange Semiconductor
Product Specification
2SB816
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
2SB816
Silicon PNP Power Transistors
4