Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 50 mA ICM Collector current-peak 100 mA PC Collector power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V Collector-emitter saturation voltage IC=30mA ;IB=3mA 1 V ICBO Collector cut-off current VCB=100V; IE=0 1 μA hFE DC current gain IC=10mA ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IE=-10mA ; VCB=10V VCEsat CONDITIONS hFE Classifications R S 130-220 185-330 2 MIN 130 TYP. MAX 330 3 70 UNIT pF MHz Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors 4