ISC 2SB857

Inchange Semiconductor
Product Specification
2SB857 2SB858
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD1133/1134
APPLICATIONS
・Low frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SB857
Emitter-base voltage
UNIT
-70
V
-50
Open base
2SB858
VEBO
VALUE
V
-60
Open collector
-5
V
IC
Collector current
-4
A
ICP
Collector current-peak
-8
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB857 2SB858
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
CONDITIONS
2SB857
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-50
IC=-50mA; RBE=∞
2SB858
V
-60
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA; IE=0
-70
V
V(BR)EBO
Emitter-base breakdown votage
IE=-10μA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-1.0
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
-1.0
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-1
μA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
60
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
35
Transition frequency
IC=-0.5A ; VCE=-4V
VCEsat
fT
‹
hFE-1 classifications
B
C
D
60-120
100-200
160-320
2
320
15
MHz
Inchange Semiconductor
Product Specification
2SB857 2SB858
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SB857 2SB858
Silicon PNP Power Transistors
4