Inchange Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SD1189F ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -32 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A ICM Collector current-Peak -3 A PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -32 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A ICBO Collector cut-off current IEBO hFE VCEsat fT COB CONDITIONS B MIN TYP. UNIT -0.8 V VCB=-20V; IE=0 -1.0 μA Emitter cut-off current VEB=-4V; IC=0 -1.0 μA DC current gain IC=-0.5A ; VCE=-3V Transition frequency IC=-0.5A ; VCE=-5V;f=30MHz 100 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-10V 50 pF hFE-2 Classifications P Q R 82-180 120-270 180-390 2 -0.5 MAX 82 390 Inchange Semiconductor Product Specification 2SB891F Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3