Inchange Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA743/743A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO PARAMETER CONDITIONS D N O IC 2SC1212 M E S GE Collector-base voltage Open emitter 2SC1212A VCEO VEBO N A H INC Collector- emitter voltage Emitter-base voltage IC Collector current PD Total power dissipation 2SC1212 VALUE 50 V 80 50 Open base 2SC1212A UNIT V 80 Open collector 4 V 1 A Ta=25℃ 0.75 TC=25℃ 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1212 V(BR)CEO MAX UNIT IC=10mA ;RBE=∞ V 80 2SC1212 50 Collector-base breakdown voltage IC=1mA ;IE=0 V 2SC1212A V(BR)EBO TYP. 50 Collector-emitter breakdown voltage 2SC1212A V(BR)CBO MIN 80 Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 5 μA hFE-1 DC current gain IC=50mA ; VCE=4V DC current gain IC=1A ; VCE=4V VCEsat hFE-2 固 fT 导体 半 电 Transition frequency M E S E G N A CH IN 60-120 V R O T UC 60 D N O IC IC=30mA ; VCE=4V hFE-1 Classifications B 4 C 100-200 2 20 200 160 MHz Inchange Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors 4